Magneto-Photoluminescence Study of InGaAs/GaAs Quantum Wells and Quantum Dots Grown on (111)B GaAs Substrate
スポンサーリンク
概要
- 論文の詳細を見る
InGaAs/GaAs quantum well (QW) and quantum dot (QD) structures grown on GaAs (111)B substrates under different growing temperatures are investigated by magneto-photoluminescence (PL) up to 15 T in both Faraday and Voigt configurations. The spatial extents of the carrier wave functions (ECWFs) are deduced from the diamagnetic shift of the PL peak energy. The binding energies of the InGaAs/GaAs QWs are evaluated to be about 5 meV. The QW ECWFs in the growth direction obtained by the diamagnetic shift are consistent with those calculated by the k・p theory. The heights and radii of the InGaAs/GaAs QDs are also estimated from the ECWFs. In addition, we found that the in-plane ECWFs decreased slightly as the growth temperature was varied from 525 to 450℃. The ECWFs in the growth direction decreased when the growth temperature was varied from 525 to 480℃ and then increased as the temperature was decreased to 450℃.
- 社団法人応用物理学会の論文
- 2000-06-15
著者
-
Lee Chien-ping
Department Of Electronic Engineering National Chiao Tung University
-
Tsai Fu-yi
Department Of Electronics Engineering National Chiao Tung University
-
Shields Philip
Department Of Electronic And Electrical Engineering University Of Bath
-
TYAN Shing-Long
Department of Physics, National Cheng Kung University
-
Shields Philip
Department Of Physics Clarendon Laboratory University Of Oxford
-
NICHOLAS Robin
Department of Physics, Clarendon Laboratory, University of Oxford
-
Nicholas Robin
Department Of Physics Clarendon Laboratory University Of Oxford
-
Tyan Shing-long
Department Of Physics National Cheng Kung University
関連論文
- Characterization of Improved AlGaAs/GaAs Resonant Tunneling Heterostructure Bipolar Transistors
- Ultra-High-Density InGaN Quantum Dots Grown by Metalorganic Chemical Vapor Deposition
- Performance of AlGaN/GaN Heterostrucrure FETs Over Temperatures
- Temperature-Dependent Electron Transport Properties of AlGaN/GaN Heterostructures
- Effects of Low Temprature Grown GaAs Layer on Compositional Disordering of AlGaAs/GaAs Superlattices
- Composition Modulation of In_xGa_As Quantum Wells by Fast Dimer Arsenic Flux Change Using Valved Arsenic Cracker
- Thermal Stability of Plasma-Treated Ohmic Contacts to n-GaN
- Light Emission from InGaN Quantum Wells Grown on the Facets of Closely Spaced GaN Nano-Pyramids Formed by Nano-Imprinting
- Studies of Ultrathin InGaAs Quantum Wells Grown at Different Temperatures by Magneto-Photoluminescence
- Ultra-High-Density InGaN Quantum Dots Grown by Metalorganic Chemical Vapor Deposition
- Photoluminescence Study of High-Quality InGaAs/GaAs Quantum Dots on (111) B GaAs Substrates
- Raman Scattering of InAs_Sb_xP_y Quaternary Alloys
- Comparison of InGaP/InGaAs/GaAs and InGaP/InGaAs/AlGaAs Pseudomorphic High Electron Mobility Transistors : Semiconductors
- Magneto-Photoluminescence Study of InGaAs/GaAs Quantum Wells and Quantum Dots Grown on (111)B GaAs Substrate
- Lateral Two-Dimensional p--i--n Diode in a Completely Undoped GaAs/AlGaAs Quantum Well
- Thermal Stability of Plasma-Treated Ohmic Contacts to n-GaN
- Mode Control of Vertical-Cavity Surface-Emitting Lasers by Germanium Coating
- Temperature-Dependent Electron Transport Properties of AlGaN/GaN Heterostructures
- Photoluminescence of Single GaN/InGaN Nanorod Light Emitting Diode Fabricated on a Wafer Scale
- Optical Properties of GaN Nanorods Containing a Single or Multiple InGaN Quantum Wells
- Photoluminescence of Single GaN/InGaN Nanorod Light Emitting Diode Fabricated on a Wafer Scale
- Optical Properties of GaN Nanorods Containing a Single or Multiple InGaN Quantum Wells