Ultra-High-Density InGaN Quantum Dots Grown by Metalorganic Chemical Vapor Deposition
スポンサーリンク
概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2004-02-15
著者
-
Wang Te-chung
Opto-electronics And System Laboratories Industrial Technology Research Institute
-
Lee Chien-ping
Department Of Electronic Engineering National Chiao Tung University
-
TSAI Ching-En
Opto-Electronics and System Laboratories, Industrial Technology Research Institute
-
TU Ru-Chin
Opto-Electronics and System Laboratories, Industrial Technology Research Institute
-
TUN Chun-Ju
Institute of Optical Science, National Central University
-
CHUO Chang-Cheng
Opto-Electronics and System Laboratories, Industrial Technology Research Institute
-
LEE Bing-Chi
Department of Electronic Engineering, National Chiao Tung University
-
CHI Jim
Opto-Electronics and System Laboratories, Industrial Technology Research Institute
-
CHI Gou-Chung
Institute of Optical Science, National Central University
-
Lee C‐p
Department Of Electronic Engineering National Chiao Tung University
-
Chi Jim
Opto-electronics And System Laboratories Industrial Technology Research Institute
関連論文
- Characterization of Improved AlGaAs/GaAs Resonant Tunneling Heterostructure Bipolar Transistors
- Study of InGaN red emission multiple Quantum Dots
- Ultra-High-Density InGaN Quantum Dots Grown by Metalorganic Chemical Vapor Deposition
- Performance of AlGaN/GaN Heterostrucrure FETs Over Temperatures
- Temperature-Dependent Electron Transport Properties of AlGaN/GaN Heterostructures
- Effects of Low Temprature Grown GaAs Layer on Compositional Disordering of AlGaAs/GaAs Superlattices
- Composition Modulation of In_xGa_As Quantum Wells by Fast Dimer Arsenic Flux Change Using Valved Arsenic Cracker
- High-Resolution Scanning Electron Microscopy Observation of GaN/AlGaN Strained-Layer Superstructures in GaN-Based Violet Laser Diodes
- Thermal Stability of Plasma-Treated Ohmic Contacts to n-GaN
- Ultra-High-Density InGaN Quantum Dots Grown by Metalorganic Chemical Vapor Deposition
- Photoluminescence Study of High-Quality InGaAs/GaAs Quantum Dots on (111) B GaAs Substrates
- Comparison of InGaP/InGaAs/GaAs and InGaP/InGaAs/AlGaAs Pseudomorphic High Electron Mobility Transistors : Semiconductors
- Magneto-Photoluminescence Study of InGaAs/GaAs Quantum Wells and Quantum Dots Grown on (111)B GaAs Substrate
- Lateral Two-Dimensional p--i--n Diode in a Completely Undoped GaAs/AlGaAs Quantum Well
- Thermal Stability of Plasma-Treated Ohmic Contacts to n-GaN
- Mode Control of Vertical-Cavity Surface-Emitting Lasers by Germanium Coating
- Temperature-Dependent Electron Transport Properties of AlGaN/GaN Heterostructures