Thermal Stability of Plasma-Treated Ohmic Contacts to n-GaN

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2003-04-30

著者

• Lee Chien-ping

  Department Of Electronic Engineering National Chiao Tung University

• Lee Chien-chi

  Department Of Electronics Engineering National Chiao Tung University

• LEE Wei-I

  Department of Electrophysics, and Microelectronics and Information Systems Research Center, National

• LIN Sheng-Di

  Department of Electronics Engineering, National Chiao Tung University

• YEH Meng-Hsin

  Department of Electrophysics, National Chiao Tung University

• KUO Cheng-Ta

  R & D Department, Advanced Epitaxy Technology Inc.

関連論文

• Characterization of Improved AlGaAs/GaAs Resonant Tunneling Heterostructure Bipolar Transistors
• Ultra-High-Density InGaN Quantum Dots Grown by Metalorganic Chemical Vapor Deposition
• Nonlithographic Random Masking and Regrowth of GaN Microhillocks to Improve Light-Emitting Diode Efficiency
• A Dopant-Related Defect in Te-Doped AlInP
• Performance of AlGaN/GaN Heterostrucrure FETs Over Temperatures
• Temperature-Dependent Electron Transport Properties of AlGaN/GaN Heterostructures
• Effects of Low Temprature Grown GaAs Layer on Compositional Disordering of AlGaAs/GaAs Superlattices
• Composition Modulation of In_xGa_As Quantum Wells by Fast Dimer Arsenic Flux Change Using Valved Arsenic Cracker
• Organometallic Vapor Phase Epitaxial Growth of AlAs_xSb_ Films Using Tertiarybutylarsine
• Analysis of Influence of Alkyl Sources on Deep Levels in GaN by Transient Capacitance Method
• Deep Level Transient Spectroscopy Depth Profile Measurements of Polycrystalline Zinc Oxide Ceramic
• Influence of Barrier Growth Temperature on the Properties of InGaN/GaN Quantum Well : Semiconductors
• Ga_In_P Barrier Layer for Wet Oxidation of AIAs
• Thermal Stability of Plasma-Treated Ohmic Contacts to n-GaN
• Ultra-High-Density InGaN Quantum Dots Grown by Metalorganic Chemical Vapor Deposition
• Photoluminescence Study of High-Quality InGaAs/GaAs Quantum Dots on (111) B GaAs Substrates
• Comparison of InGaP/InGaAs/GaAs and InGaP/InGaAs/AlGaAs Pseudomorphic High Electron Mobility Transistors : Semiconductors
• Magneto-Photoluminescence Study of InGaAs/GaAs Quantum Wells and Quantum Dots Grown on (111)B GaAs Substrate
• Lateral Two-Dimensional p--i--n Diode in a Completely Undoped GaAs/AlGaAs Quantum Well
• Thermal Stability of Plasma-Treated Ohmic Contacts to n-GaN
• Mode Control of Vertical-Cavity Surface-Emitting Lasers by Germanium Coating
• Characterization of Single-Crystalline Aluminum Thin Film on (100) GaAs Substrate
• Temperature-Dependent Electron Transport Properties of AlGaN/GaN Heterostructures
• Characterization of Single-Crystalline Aluminum Thin Film on (100) GaAs Substrate

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