Characterization of Single-Crystalline Aluminum Thin Film on (100) GaAs Substrate
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概要
- 論文の詳細を見る
- 2013-04-00
著者
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LIN Sheng-Di
Department of Electronics Engineering, National Chiao Tung University
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Wu Jau-Yang
Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan
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Lo Ming-Cheng
Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan
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Lin Shi-Wei
Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan
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Lin Ming-Huei
Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan
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Liang Chi-Te
Department of Physics, National Taiwan University, Taipei 106, Taiwan
関連論文
- Thermal Stability of Plasma-Treated Ohmic Contacts to n-GaN
- Magnesium Doping of In-rich InGaN
- Effect of Buffer Layers on Electrical, Optical and Structural Properties of AlGaN/GaN Heterostructures Grown on Si
- Lateral Two-Dimensional p--i--n Diode in a Completely Undoped GaAs/AlGaAs Quantum Well
- Thermal Stability of Plasma-Treated Ohmic Contacts to n-GaN
- Characterization of Single-Crystalline Aluminum Thin Film on (100) GaAs Substrate
- Characterization of Single-Crystalline Aluminum Thin Film on (100) GaAs Substrate