Effect of Buffer Layers on Electrical, Optical and Structural Properties of AlGaN/GaN Heterostructures Grown on Si
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概要
- 論文の詳細を見る
AlGaN/GaN heterostructures with different buffer layers were grown on Si substrates by metal-organic vapor phase epitaxy (MOVPE). The electrical property of the two-dimensional electron gas (2DEG) formed at the AlGaN/GaN interface was correlated with both the optical and structural quality of the GaN layer involved. A combination of two sets of high-temperature and low-temperature AlN and an ultrashort exposure to SiH4 showed the best-grown GaN, followed by a similar buffer layer without the SiH4 exposure, and a graded AlGaN buffer layer only. The enhancements in both electron mobility and 2DEG density were also accompanied by a reduced donor–acceptor pair (DAP) emission and a reduced dislocation density in the top GaN grown.
- 2006-04-15
著者
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Chen Ji-wei
Department Of Computer Science And Information Management Soochow University
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Chen Nie-chuan
Institute Of Electro-optical Engineering Chang Gung University
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Chang Chin-an
Institute Of Electro-optical Engineering Chang Gung University
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Shih Chaun-feng
Institute Of Electro-optical Engineering Chang Gung University
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Chang Pen-hsiu
Institute Of Electro-optical Engineering Department Of Electronics Engineering Chang Gung University
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Chen Yang-fang
Department Of Physics National Taiwan University
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Wu Yu-Hsiang
Institute of Electro-Optical Engineering, Chang Gung University, Tao-Yuan, Taiwan, Republic of China
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Shih Chaun-Feng
Institute of Electro-Optical Engineering, Chang Gung University, Tao-Yuan, Taiwan, Republic of China
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Lin Tai-Yuan
Institute of Optoelectronic Science, National Taiwan Ocean University, Keelung 20224, Taiwan
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Liang Chi-Te
Department of Physics, National Taiwan University, Taipei, Taiwan, Republic of China
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Liu Chen-Han
Institute of Electro-Optical Engineering, Chang Gung University, Tao-Yuan, Taiwan, Republic of China
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Lien Shao-Tang
Institute of Electro-Optical Engineering, Chang Gung University, Tao-Yuan, Taiwan, Republic of China
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Peng Hien-Chiu
Institute of Electro-Optical Engineering, Chang Gung University, Tao-Yuan, Taiwan, Republic of China
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Tang Tze-Yu
Institute of Electro-Optical Engineering, Chang Gung University, Tao-Yuan, Taiwan, Republic of China
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Lien Wei-Chieh
Institute of Electro-Optical Engineering, Chang Gung University, Tao-Yuan, Taiwan, Republic of China
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Wu Kun-Ta
Department of Physics, National Taiwan University, Taipei, Taiwan, Republic of China
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Lu Tong-Uan
Institute of Optoelectronic Sciences, National Taiwan Ocean University, Keelung, Taiwan, Republic of China
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Chang Chin-An
Institute of Electro-Optical Engineering, Chang Gung University, Tao-Yuan, Taiwan, Republic of China
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Chen Yang-Fang
Department of Physics, National Taiwan University, Taipei, Taiwan, Republic of China
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Liang Chi-Te
Department of Physics, National Taiwan University, Taipei 106, Taiwan
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