Effects of AI-containing Intermediate III-nitride Strained Multilayers on the Threading Dislocation Density and Optical Properties of GaN Films
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-11-15
著者
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Wang Cheng-liang
Department Of Materials Science And Engineering Feng Chia University
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GONG Jyh-Rong
Department of Physics, National Chung Hsing University
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LIAO Wei-Tsai
Department of Materials Science and Engineering, Feng Chia University
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Gong Jyh-rong
Department Of Physics National Chung Hsing University
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Liao Wei-tsai
Department Of Materials Science And Engineering Feng Chia University
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Tsai Yu-li
Department Of Materials Science And Engineering Feng Chia University
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Shi Bing-hong
Institute Of Optical Physics Feng Chia University
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GONO Jyh-Rong
Department of Materials Science and Engineering, Feng Chia University
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TSENG Su-Fen
Department of Materials Science and Engineering, Feng Chia University
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HUANG Cheng-Wei
Department of Materials Science and Engineering, Feng Chia University
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LIN Tai-Yuan
Institute of Optoelectronic Sciences, National Taiwan Ocean University
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Lin Tai-yuan
Institute Of Optoelectronic Sciences National Taiwan Ocean University
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Tseng Su-fen
Department Of Materials Science And Engineering Feng Chia University
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Gono Jyh-rong
Department Of Materials Science And Engineering Feng Chia University
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Huang Cheng-wei
Department Of Materials Science And Engineering Feng Chia University
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Lin Tai-Yuan
Institute of Optoelectronic Science, National Taiwan Ocean University, Keelung 20224, Taiwan
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Liao Wei-Tsai
Department of Electro-Physics, National Chiao-Tung University, Hsinchu, Taiwan 30010, R.O.C.
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Gong Jyh-Rong
Department of Materials Science and Engineering, Feng Chia University
関連論文
- Characteristics and Interactions of Threading Dislocations in GaN Films Grown on (0001) Sapphire Substrates With or Without Short-Period Superlattice Insertion
- Characteristics and Interactions of Threading Dislocations in GaN Films Grown on (0001) Sapphire Substrates With or Without Short-Period Superlattice Insertion
- Effects of AI-containing Intermediate III-nitride Strained Multilayers on the Threading Dislocation Density and Optical Properties of GaN Films
- Optical Characteristics of GaN Films Overgrown on Wet-etched GaN Templates
- Erratum: ``Reduction of Efficiency Droop in Semipolar $(1\bar{1}01)$ InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates''
- Reduction of Efficiency Droop in Semipolar $(1\bar{1}01)$ InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates
- Influence of Rapid Thermal Annealing on Raman Scattering of InN Epilayers
- Effect of Buffer Layers on Electrical, Optical and Structural Properties of AlGaN/GaN Heterostructures Grown on Si