Reduction of Efficiency Droop in Semipolar $(1\bar{1}01)$ InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates
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概要
- 論文の詳細を見る
We present a study of semi-polar $(1\bar{1}01)$ InGaN-based light emitting diodes (LEDs) grown on patterned (001) Si substrates by atmospheric-pressure metal organic chemical vapor deposition. A transmission electron microscopy image of the semi-polar template shows that the threading dislocation density was decreased significantly. From electroluminescence measurement, semi-polar LEDs exhibit little blue-shift and low efficiency droop at a high injection current because the reduction of the polarization field not only made the band diagram smoother but also restricted electron overflow to the p-GaN layer as shown in simulations. These results indicate that semi-polar InGaN-based LEDs can possess a high radiative recombination rate and low efficiency droop at a high injection current.
- 2011-01-25
著者
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Kuo Hao-chung
Department Of Photonic And Institute Of Electro-optical Engineering National Chiao Tung University
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Lu Tien-chang
Department Of Photonics And Institute Of Electro-optical Engineering National Chiao Tung University
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Lin Chien-chung
Department Of Information Management Yuan Ze University
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Liao Wei-tsai
Department Of Materials Science And Engineering Feng Chia University
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Honda Yoshio
Department Of Electronics Nagoya University
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Wang Shing-chung
Department Of Photonic And Institute Of Electro-optical Engineering National Chiao Tung University
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Sawaki Nobuhiko
Department Of Electronics Faculty Of Engineering Nagoya University
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Yamaguchi Masahito
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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Wang Shing-Chung
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, Taiwan 30010, R.O.C.
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Chiu Ching-Hsueh
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, Taiwan 30010, R.O.C.
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Lin Da-Wei
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, Taiwan 30010, R.O.C.
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Li Zhen-Yu
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, Taiwan 30010, R.O.C.
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Chang Wei-Ting
Department of Electro-Physics, National Chiao-Tung University, Hsinchu, Taiwan 30010, R.O.C.
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Hsu Hung-Wen
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, Taiwan 30010, R.O.C.
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Tanikawa Tomoyuki
Department of Electronics, Nagoya University, Nagoya 464-8603, Japan
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Lin Da-Wei
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 30010, Taiwan
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Li Zhen-Yu
Department of Electronic Engineering, Faculty of Engineering, Chung Yuan Christian University, Chung-Li 32023, Taiwan
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Kuo Hao-Chung
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, Taiwan 30010, R.O.C.
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Lin Chien-Chung
Department of Opto-Electronics Epitaxy and Devices, Industrial Technology Research Institute, Hsinchu, Taiwan 31040, R.O.C.
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Chiu Ching-Hsueh
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan
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Liao Wei-Tsai
Department of Electro-Physics, National Chiao-Tung University, Hsinchu, Taiwan 30010, R.O.C.
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Lu Tien-Chang
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, Taiwan 30010, R.O.C.
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Chiu Ching-Hsueh
Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C.
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HONDA Yoshio
Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University
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Honda Yoshio
Department of Electronics, Nagoya University, Nagoya 464-8603, Japan
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Tanikawa Tomoyuki
Department of Electronics and Akaaki Research Center, Nagoya University, Nagoya 464-8603, Japan
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Sawaki Nobuhiko
Department of Electrical and Electronic Engineering, Aichi Institute of Technology, Toyota, Aichi 470-0392, Japan
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YAMAGUCHI Masahito
Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University
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Honda Yoshio
Department of Chemistry, Faculty of Science, Kanazawa University
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Tanikawa Tomoyuki
Department of Electrical Engineering and Computer Science, Akasaki Research Center, Nagoya University, Nagoya 464-8603, Japan
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