GaN Thickness Effect on Directional Light Enhancement from GaN-Based Film-Transferred Photonic Crystal Light-Emitting Diodes

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概要

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• Directional light enhancement behavior including collimated far-field patterns sensitively depending on both photonic crystal (PhC) lattice constant and GaN thickness from GaN film-transferred light-emitting diodes (FTLEDs) with a triangular PhC lattice has been experimentally studied. Far-field pattern measurement in the $\Gamma$–M and $\Gamma$–K directions of GaN PhC FTLEDs with various lattice constants and GaN thicknesses revealed different far-field profiles as detemined on the basis of guided mode extraction of Bragg's diffraction. Additionally, three-dimensional (3D) far-field measurement revealing the PhC diffraction patterns was also demonstrated. We also used the 3D finite-different time-domain method to confirm the experimental results.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2010-04-25

著者

• Kuo Hao-chung

  Department Of Photonic And Institute Of Electro-optical Engineering National Chiao Tung University

• Hao-Chung Kuo

  Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C.

• Lai Chun-Feng

  Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C.

• Chao Chia-Hsin

  Electronics and Opto-electronics Research Laboratories, Industrial Technology Research Institute, Hsinchu 310, Taiwan, R.O.C.

• Peichen Yu

  Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C.

• His-Hsuan Yen

  Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C.

• Wen-Yung Yeh

  Electronics and Opto-electronics Research Laboratories, Industrial Technology Research Institute, Hsinchu 310, Taiwan, R.O.C.

• Chia-Hsin Chao

  Electronics and Opto-electronics Research Laboratories, Industrial Technology Research Institute, Hsinchu 310, Taiwan, R.O.C.

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