Fabrication and Characterization of In0.25Ga0.75N/GaN Multiple Quantum Wells Embedded in Nanorods

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概要

• 論文の詳細を見る

• In0.25Ga0.75N/GaN multiple quantum wells embedded in nanorods with diameters of 60–100 nm were fabricated by inductively coupled plasma reactive ion etching with Cl2/Ar plasma. The strong optical emission of the nanorods, observed by micro-photoluminescence measurement at 80 K, reveals a large blue shift of about 90 meV and an increase in photoluminescence intensity density of more than 17-fold, compared with that of the as-grown wafer under the same excitation power density of 80 W/cm2. These nanostructures have a high potential for application in efficient GaN-based vertical cavity emitters.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2005-10-15

著者

• Kuo Hao-chung

  Department Of Photonic And Institute Of Electro-optical Engineering National Chiao Tung University

• HSUEH Tao-Hung

  Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University

• HUANG Hung-Wen

  Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University

• CHANG Ya-Hsien

  Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University

• OU-YANG Miao-Chia

  Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University

• Wang Shing-chung

  Department Of Photonic And Institute Of Electro-optical Engineering National Chiao Tung University

• Wang Shing-Chung

  Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hinchu 300, Taiwan, R.O.C.

• Sheu Jinn-Kong

  Institute of Electro-Optical Science and Engineering and Advanced Optoelectronic Technology Center and Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan, Taiwan 701, Republic of China

• Ou-Yang Miao-Chia

  Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hinchu 300, Taiwan, R.O.C.

• Hsueh Tao-Hung

  Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hinchu 300, Taiwan, R.O.C.

• Huang Hung-Wen

  Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hinchu 300, Taiwan, R.O.C.

• Chang Ya-Hsien

  Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hinchu 300, Taiwan, R.O.C.

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