Tunable Light Emission from GaN-Based Photonic Crystal with Ultraviolet AlN/AlGaN Distributed Bragg Reflector
スポンサーリンク
概要
- 論文の詳細を見る
In this paper, the characteristics of GaN-based two-dimensional (2D) photonic crystal bandedge coupling operation with an ultraviolet AlN/AlGaN distributed Bragg reflector (DBR) have been investigated and analyzed. The 25-pair AlN/Al0.2GaN0.8 DBR shows a high reflectivity of 85% at 375 nm with the stop-band width of 15 nm. A strong light emission was observed from GaN photonic crystals within high reflectivity region of DBR. The emission wavelength can be also manipulated by varying the radius to lattice constant ratio. The photonic crystal bandedge mode was also characterized with three-dimensional plane-wave expansion (PWE) and finite-difference time-domain (FDTD) simulation.
- 2011-04-25
著者
-
Kuo Hao-chung
Department Of Photonic And Institute Of Electro-optical Engineering National Chiao Tung University
-
Lu Tien-chang
Department Of Photonics And Institute Of Electro-optical Engineering National Chiao Tung University
-
SHIH M.
Department of Electrical Engineering, National University of Kaohsiung
-
Chen Jun-rong
Department Of Photonics And Institute Of Electro-optical Engineering National Chiao Tung University
-
Chiu Ching-Hsueh
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, Taiwan 30010, R.O.C.
-
Yang Yi-Chun
Research Center for Applied Sciences (RCAS), Academia Sinica, Nankang, Taipei 115, Taiwan, R.O.C.
-
Chen Cheng-Chang
Department of Photonic and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan
-
Chen Cheng-Chang
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan, R.O.C.
-
Li Zhen-Zu
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan, R.O.C.
-
Kuo Hao-Chung
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan, R.O.C.
-
Lu Tien-Chang
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan, R.O.C.
-
Chiu Ching-Hsueh
Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C.
-
Chiu Ching-Hsueh
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan, R.O.C.
関連論文
- Light-Output Enhancement of GaN-Based Light-Emitting Diodes by Photoelectrochemical Oxidation in H_2O
- Ultraviolet Lasing of Sol-Gel Derived Zinc Oxide Polycrystalline Films
- High Performances of 650nm Resonant Cavity Light Emitting Diodes for Plastic Optical Fiber Applications
- Strong Ultraviolet Emission from InGaN/AlGaN Multi Quantum Well Grown by Multi-step Process
- Effects of Different n-Electrode Patterns on Optical Characteristics of Large-Area p-Side-Down InGaN Light-Emitting Diodes Fabricated by Laser Lift-Off
- Enhanced Light Output of InGaN/GaN Light Emitting Diode with Excimer Laser Etching on Nano-roughened P-GaN Surface
- Numerical Study on Lateral Mode Behavior of 660-nm InGaP/AlGaInP Multiple-Quantum-Well Laser Diodes
- Lasing Actions of Octagonal Quasi-Periodic Photonic Crystal Microcavities
- Room-Temperature Operation of Optically Pumped Blue-Violet GaN-Based Vertical-Cavity Surface-Emitting Lasers Fabricated by Laser Lift-Off
- Optically pumped GaN-based vertical cavity surface emitting lasers: technology and characteristics (Special issue: Microoptics)
- The Fabrication of the Double Ring Resonators Semiconductor Laser
- The Fabrication of the Circular Ring Laser Resonators by Excimer Laser Assisted Etching at Cryogenic Temperature
- Tunable Light Emission from GaN-Based Photonic Crystal with Ultraviolet AlN/AlGaN Distributed Bragg Reflector
- Light Enhancement of Silicon-Nanocrystal-Embedded SiOx Film on Silicon-on-Insulator Substrate
- Erratum: ``Reduction of Efficiency Droop in Semipolar $(1\bar{1}01)$ InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates''
- Reduction of Efficiency Droop in Semipolar $(1\bar{1}01)$ InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates
- Enhanced Stimulated Emission from Optically Pumped Gallium Nitride Nanopillars
- Lasing Behavior, Gain Property, and Strong Coupling Effects in GaN-Based Vertical-Cavity Surface-Emitting Lasers
- Room-Temperature Operation of Optically Pumped Blue-Violet GaN-Based Vertical-Cavity Surface-Emitting Lasers Fabricated by Laser Lift-Off
- Effect of Controlled Growth Dynamics on the Microstructure of Nonpolar $a$-Plane GaN Revealed by X-ray Diffraction
- Efficiency Improvement of Single-Junction In0.5Ga0.5P Solar Cell with Compositional Grading p-Emitter/Window Capping Configuration
- Investigation of Hot-Carrier Stress Effect on High-Frequency Performance of Laterally Diffused Metal-Oxide-Semiconductor Transistors (Special Issue : Solid State Devices and Materials (1))
- Metal Organic Chemical Vapor Deposition Growth of GaN-Based Light Emitting Diodes With Naturally Formed Nano Pyramids
- High-Temperature Polariton Lasing in a Strongly Coupled ZnO Microcavity
- Efficiency and Droop Improvement in InGaN/GaN Light-Emitting Diodes by Selective Carrier Distribution Manipulation
- Improvement in Crystalline Quality of InGaN-Based Epilayer on Sapphire via Nanoscaled Epitaxial Lateral Overgrowth
- Large Area of Ultraviolet GaN-Based Photonic Quasicrystal Laser
- Light Output Enhancement of GaN-Based Light-Emitting Diodes by Optimizing SiO2 Nanorod-Array Depth Patterned Sapphire Substrate
- High-Temperature Polariton Lasing in a Strongly Coupled ZnO Microcavity
- Characterization of InGaN/GaN Multiple Quantum Well Nanorods Fabricated by Plasma Etching with Self-Assembled Nickel Metal Nanomasks
- Temperature-Dependent Photoluminescence of Highly Strained InGaAsN/GaAs Quantum Wells ($\lambda = 1.28--1.45$ μm) with GaAsP Strain-Compensated Layers
- Ultraviolet Lasing of Sol–Gel-Derived Zinc Oxide Polycrystalline Films
- High-Performance 650 nm Resonant-Cavity Light-Emitting Diodes for Plastic Optical-Fiber Application
- 10 Gbps InGaAs:Sb-GaAs-GaAsP Quantum Well Vertical Cavity Surface Emitting Lasers with 1.27 μm Emission Wavelengths
- Enhanced Light Output in InGaN/GaN Light Emitting Diodes with Excimer Laser Etching Surfaces
- Performance Enhancement of $a$-Plane Light-Emitting Diodes Using InGaN/GaN Superlattices
- Fabrication of Large-Area GaN-Based Light-Emitting Diodes on Cu Substrate
- Fabrication and Characteristics of GaN-Based Microcavity Light-Emitting Diodes with High Reflectivity AlN/GaN Distributed Bragg Reflectors
- Optically Pumped GaN-based Vertical Cavity Surface Emitting Lasers: Technology and Characteristics
- Enhanced Light Output in InGaN-Based Light-Emitting Diodes with Omnidirectional One-Dimensional Photonic Crystals
- Power Enhancement of GaN-Based Flip-Chip Light-Emitting Diodes with Triple Roughened Surfaces
- Strong Ultraviolet Emission from InGaN/AlGaN Multiple Quantum Well Grown by Multi-step Process
- GaN Thickness Effect on Directional Light Enhancement from GaN-Based Film-Transferred Photonic Crystal Light-Emitting Diodes
- Photoluminescence of Plasma Enhanced Chemical Vapor Deposition Amorphous Silicon Oxide with Silicon Nanocrystals Grown at Different Fluence Ratios and Substrate Temperatures
- Divergent Far-Field III–Nitride Ultrathin Film-Transferred Photonic Crystal Light-Emitting Diodes
- High Extraction Efficiency of GaN-Based Vertical-Injection Light-Emitting Diodes Using Distinctive Indium--Tin-Oxide Nanorod by Glancing-Angle Deposition
- Lasing Actions of Octagonal Quasi-Periodic Photonic Crystal Microcavities
- Fabrication and Characterization of In0.25Ga0.75N/GaN Multiple Quantum Wells Embedded in Nanorods
- Relative Intensity Noise Characteristics of Long-Wavelength Quantum Dot Vertical-Cavity Surface-Emitting Lasers
- Light-Output Enhancement of GaN-Based Light-Emitting Diodes by Photoelectrochemical Oxidation in H2O