Enhanced Stimulated Emission from Optically Pumped Gallium Nitride Nanopillars
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概要
- 論文の詳細を見る
We report the observation of an enhanced stimulated emission from optically pumped GaN nanopillars. The nanopillars were fabricated from an epitaxial wafer by patterned etching followed by crystalline regrowth. When the sample was optically excited, a strong stimulated emission peak emerged from a broad spontaneous emission background. The emission was attributed to electron--hole plasma gain at high carrier density. The emission slope efficiency was greatly enhanced by 20 times compared with a GaN substrate under the same pumping configuration. We remark that the enhancement is due to better gain and photon interaction from the multiple scattering of photons among nanopillars.
- 2011-02-25
著者
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Kuo Hao-chung
Department Of Photonic And Institute Of Electro-optical Engineering National Chiao Tung University
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Wang Shing-chung
Department Of Photonic And Institute Of Electro-optical Engineering National Chiao Tung University
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Wang Shing-Chung
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, Taiwan 300, R.O.C.
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Lo Ming-Hua
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C.
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Lo Ming-Hua
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, Taiwan 300, R.O.C.
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Cheng Yuh-Jen
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, Taiwan 300, R.O.C.
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Kuo Hao-Chung
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, Taiwan 300, R.O.C.
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