High Extraction Efficiency of GaN-Based Vertical-Injection Light-Emitting Diodes Using Distinctive Indium--Tin-Oxide Nanorod by Glancing-Angle Deposition

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概要

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• The enhanced light extraction and reduced forward voltage of a GaN-based vertical injection light emitting diode (VI-LED) with an indium--tin-oxide (ITO) nanorod array were demonstrated. The ITO nanorod array was fabricated by the glancing-angle deposition method. The employment of ITO nanostructures amplified not only the broadband transmission but also the current spreading. The optical output power of GaN-based VI-LEDs with ITO nanorods was enhanced by 50% compared with a conventional VI-LED at an injection current of 350 mA. The extraction efficiency was dramatically raised from 62 to 93% by the surface ITO nanorods. We also optimized the extraction efficiency of the GaN-based VI-LED with an ITO nanorod array by tuning the thickness of the n-GaN top layer via three-dimensional finite difference time domain (3D-FDTD) simulation.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2011-05-25

著者

• Kuo Hao-chung

  Department Of Photonic And Institute Of Electro-optical Engineering National Chiao Tung University

• Tsai Min-An

  Department of Electrophysics, National Chiao-Tung University, Hsinchu 30010, Taiwan, R.O.C.

• Wang Hsun-Wen

  Department of Electrophysics, National Chiao-Tung University, Hsinchu 30010, Taiwan, R.O.C.

• Yu Peichen

  Department of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu 30010, Taiwan, R.O.C.

• Lin Shiuan-Huei

  Department of Electrophysics, National Chiao-Tung University, Hsinchu 30010, Taiwan, R.O.C.

• Kuo Hao-Chung

  Department of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu 30010, Taiwan, R.O.C.

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