Ultraviolet Lasing of Sol-Gel Derived Zinc Oxide Polycrystalline Films
スポンサーリンク
概要
- 論文の詳細を見る
- 2005-09-13
著者
-
Kuo Hao-chung
Department Of Photonics And Institute Of Electro-optical Engineering National Chiao Tung University
-
Kuo Hao‐chung
National Chiao Tung Univ. Hsinchu Twn
-
Kuo Hao-chung
Department Of Photonic And Institute Of Electro-optical Engineering National Chiao Tung University
-
Wang S‐c
Department Of Photonics And Institute Of Electro-optical Engineering National Chiao Tung University
-
WANG Shing-Chung
Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University
-
CHANG Chun-Wei
Institute of Electro-Optical Engineering, National Chiao Tung University
-
Chiang C‐i
Materials R&d Center Chung Shan Inst. Sci. & Technol. Taoyuan Twn
-
Lai Fang-i
Department Of Electronic Engineering Ching Yun University
-
CHEN Wei-Yo
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University
-
KUO Shou-Yi
Instrument Technology Research Center, National Applied Research Laboratories
-
CHENG Chin-Pao
Department of Mechatronic Technology, National Taiwan Normal University
-
CHEN Wei-Chun
Department of Industrial Education, National Taiwan Normal University
-
Lai Fang-i.
Department Of Electronic Engineering Ching Yun University
-
Wang Shing-chung
Department Of Photonic And Institute Of Electro-optical Engineering National Chiao Tung University
-
Kuo Shou-yi
Instrument Technology Research Center National Applied Research Laboratories
-
Chen Wei-yo
Department Of Photonics And Institute Of Electro-optical Engineering National Chiao Tung University
-
Lai Fang-i
Department Of Electrical Engineering Yuan Ze University
-
Cheng Chin-pao
Department Of Mechatronic Technology National Taiwan Normal University
-
Chang Chun-wei
Department Of Industrial Education National Taiwan Normal University
-
Chen Wei-chun
Instrument Technology Research Center National Applied Research Laboratories
関連論文
- High Brightness InGaN/GaN LEDs with ESD Protection
- Nitride based Power Chip with Indium-Tin-Oxide p-Contact and Al Back-Side Reflector
- High Temperature Performance and Low Frequency Noise Characteristics of AlGaN/GaN/AlGaN Double Heterostructure Metal-Oxide-Semiconductor Heterostructure Field-Effect-Transistors with Photochemical Vapor Deposition SiO_2 Layer
- High Temperature and Low Frequency Noise of AlGaN/GaN/AlGaN Double Heterostructure MOS-HFETs with Photo-Chemical Vapor Deposition SiO_2 Layer
- InGaN/GaN Multi-Quantum Well Metal-Insulator Semiconductor Photodetectors with Photo-CVD SiO_2 Layers
- InGaN/GaN Light-Emitting Diodes with Rapidly Thermal-Annealed Ni/ITO p-Contacts
- Transparent TiN Electrodes in GaN Metal-Semiconductor-Metal Ultraviolet Photodetectors(Semiconductors)
- P-Down InGaN/GaN Multiple Quantum Wells Light-Emitting Diode Structure Grown by Metal-Organic Vapor-Phase Epitaxy
- On the Carrier Concentration and Hall Mobility in GaN Epilayers : Semiconductors
- Simulation of InGaN Quantum Well Laser Performance Using Quaternary InAlGaN Alloy as Electronic Blocking Layer
- High Temperature Stability 850-nm In_Al_Ga_As/Al_Ga_As Vertical-Cavity Surface-Emitting Laser with Single Al_Ga_As Current Blocking Layer
- Characterization of InGaN/GaN Multiple Quantum Well Nanorods Fabricated by Plasma Etching with Self-Assembled Nickel Metal Nanomasks
- Fabrication and Micro-Photoluminescence Investigation of Mg-Doped Gallium Nitride Nanorods
- 10Gbps InGaAs:Sb-GaAs-GaAsP Quantum Well Vertical Cavity Surface Emitting Lasers with 1.27μm Emission Wavelengths
- Temperature-Dependent Photoluminescence of Highly Strained InGaAsN/GaAs Quantum Wells (λ= 1.28-1.45μm) with GaAsP Strain-Compensated Layers
- Fabrication of High Speed Single Mode 1.27μm InGaAs:Sb-GaAsP Quantum Wells Vertical Cavity Surface Emitting Laser
- InGaN/GaN Multi-Quantum-Well Nanorods Fabricated by Plasma Etching Using Self-assembled Nickel Nano-masks
- Galliuln Nitride Nanorods Fabricated by Inductively Coupled Plasma Reactive Ion Etching : Semiconductors
- Beryllium-Implanted P-Type GaN With High Carrier Concentration : Semiconductors
- Light-Output Enhancement of GaN-Based Light-Emitting Diodes by Photoelectrochemical Oxidation in H_2O
- Ultraviolet Random Laser Action of Nano-structured Zinc Oxide
- Ultraviolet Lasing of Sol-Gel-Derived Zinc Oxide Polycrystalline Films (Special Issue: Solid State Devices & Materials)
- Ultraviolet Lasing of Sol-Gel Derived Zinc Oxide Polycrystalline Films
- Fabrication of Large-Area GaN-Based Light-Emitting Diodes on Cu Substrate
- Fabrication of large-area GaN Vertical Light Emitting Diodes on Copper Substrates by Laser Lift-off
- Improvement of High-Speed Oxide-Confined Vertical-Cavity Surface-Emitting Lasers
- Single-Mode Vertical-Cavity Surface-Emitting Lasers with a Deep-Etched Half-Ring-Shaped Holey Structure
- Light-output Enhanced of GaN-based Light-emitting Diodes by Photoelectrochemical oxidation in H_2O
- Influence of Sapphire Nitridation on Properties of Indium Nitride Prepared by Metalorganic Vapor Phase Epitaxy
- High Performances of 650nm Resonant Cavity Light Emitting Diodes for Plastic Optical Fiber Applications
- Strong Ultraviolet Emission from InGaN/AlGaN Multi Quantum Well Grown by Multi-step Process
- Effects of Different n-Electrode Patterns on Optical Characteristics of Large-Area p-Side-Down InGaN Light-Emitting Diodes Fabricated by Laser Lift-Off
- Enhanced Light Output of InGaN/GaN Light Emitting Diode with Excimer Laser Etching on Nano-roughened P-GaN Surface
- Growth of Highly Strained InGaAs Quantum Wells by Metalorganic Chemical Vapor Deposition with Application to Vertical-Cavity Surface-Emitting Laser
- Numerical Study on Lateral Mode Behavior of 660-nm InGaP/AlGaInP Multiple-Quantum-Well Laser Diodes
- A High-Temperature Thermodynamic Model for Metalorganic Vapor Phase Epitaxial Growth of InGaN
- Effect of Annealing on Low-Threshold-Current Large-Wavelength InGaAs Quantum Well Vertical-Cavity Laser
- Low-Threshold-Current-Density, Long-Wavelength, Highly Strained InGaAs Laser Grown by Metalorganic Chemical Vapor Deposition
- Growth of Semipolar InN($10\bar{1}3$) on LaAlO3(112) Substrate
- Tunable Light Emission from GaN-Based Photonic Crystal with Ultraviolet AlN/AlGaN Distributed Bragg Reflector
- Light Enhancement of Silicon-Nanocrystal-Embedded SiOx Film on Silicon-on-Insulator Substrate
- Erratum: ``Reduction of Efficiency Droop in Semipolar $(1\bar{1}01)$ InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates''
- Reduction of Efficiency Droop in Semipolar $(1\bar{1}01)$ InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates
- Enhanced Stimulated Emission from Optically Pumped Gallium Nitride Nanopillars
- Lasing Behavior, Gain Property, and Strong Coupling Effects in GaN-Based Vertical-Cavity Surface-Emitting Lasers
- Room-Temperature Operation of Optically Pumped Blue-Violet GaN-Based Vertical-Cavity Surface-Emitting Lasers Fabricated by Laser Lift-Off
- Effect of Controlled Growth Dynamics on the Microstructure of Nonpolar $a$-Plane GaN Revealed by X-ray Diffraction
- Efficiency Improvement of Single-Junction In0.5Ga0.5P Solar Cell with Compositional Grading p-Emitter/Window Capping Configuration
- Investigation of Hot-Carrier Stress Effect on High-Frequency Performance of Laterally Diffused Metal-Oxide-Semiconductor Transistors (Special Issue : Solid State Devices and Materials (1))
- Metal Organic Chemical Vapor Deposition Growth of GaN-Based Light Emitting Diodes With Naturally Formed Nano Pyramids
- Modeling and Optimization of Sub-Wavelength Grating Nanostructures on Cu(In,Ga)Se Solar Cell (Special Issue : Photovoltaic Science and Engineering)
- Efficiency and Droop Improvement in InGaN/GaN Light-Emitting Diodes by Selective Carrier Distribution Manipulation
- Characteristics of Multileaf Holey Light-Emitting Diodes for Fiber-Optic Communications
- Improvement in Crystalline Quality of InGaN-Based Epilayer on Sapphire via Nanoscaled Epitaxial Lateral Overgrowth
- Large Area of Ultraviolet GaN-Based Photonic Quasicrystal Laser
- Light Output Enhancement of GaN-Based Light-Emitting Diodes by Optimizing SiO2 Nanorod-Array Depth Patterned Sapphire Substrate
- InAlAs/InGaAs Metamorphic High Electron Mobility Transistor with Cu/Pt/Ti Gate and Cu Airbridges
- New Cu/Mo/Ge/Pd Ohmic Contacts on Highly Doped n-GaAs for InGaP/GaAs Heterojunction Bipolar Transistors
- Characterization of InGaN/GaN Multiple Quantum Well Nanorods Fabricated by Plasma Etching with Self-Assembled Nickel Metal Nanomasks
- Temperature-Dependent Photoluminescence of Highly Strained InGaAsN/GaAs Quantum Wells ($\lambda = 1.28--1.45$ μm) with GaAsP Strain-Compensated Layers
- Ultraviolet Lasing of Sol–Gel-Derived Zinc Oxide Polycrystalline Films
- High-Performance 650 nm Resonant-Cavity Light-Emitting Diodes for Plastic Optical-Fiber Application
- 10 Gbps InGaAs:Sb-GaAs-GaAsP Quantum Well Vertical Cavity Surface Emitting Lasers with 1.27 μm Emission Wavelengths
- Enhanced Light Output in InGaN/GaN Light Emitting Diodes with Excimer Laser Etching Surfaces
- Performance Enhancement of $a$-Plane Light-Emitting Diodes Using InGaN/GaN Superlattices
- Fabrication of Large-Area GaN-Based Light-Emitting Diodes on Cu Substrate
- Fabrication and Characteristics of GaN-Based Microcavity Light-Emitting Diodes with High Reflectivity AlN/GaN Distributed Bragg Reflectors
- Optically Pumped GaN-based Vertical Cavity Surface Emitting Lasers: Technology and Characteristics
- Enhanced Light Output in InGaN-Based Light-Emitting Diodes with Omnidirectional One-Dimensional Photonic Crystals
- Power Enhancement of GaN-Based Flip-Chip Light-Emitting Diodes with Triple Roughened Surfaces
- Strong Ultraviolet Emission from InGaN/AlGaN Multiple Quantum Well Grown by Multi-step Process
- GaN Thickness Effect on Directional Light Enhancement from GaN-Based Film-Transferred Photonic Crystal Light-Emitting Diodes
- Photoluminescence of Plasma Enhanced Chemical Vapor Deposition Amorphous Silicon Oxide with Silicon Nanocrystals Grown at Different Fluence Ratios and Substrate Temperatures
- Divergent Far-Field III–Nitride Ultrathin Film-Transferred Photonic Crystal Light-Emitting Diodes
- High Extraction Efficiency of GaN-Based Vertical-Injection Light-Emitting Diodes Using Distinctive Indium--Tin-Oxide Nanorod by Glancing-Angle Deposition
- Mechanism of Microstructure Evolution for the Cu/Ta/GaAs Structure after Thermal Annealing
- Fabrication and Characterization of In0.25Ga0.75N/GaN Multiple Quantum Wells Embedded in Nanorods
- Respiratory Failure and Coma in an International Traveler
- Relative Intensity Noise Characteristics of Long-Wavelength Quantum Dot Vertical-Cavity Surface-Emitting Lasers
- Light-Output Enhancement of GaN-Based Light-Emitting Diodes by Photoelectrochemical Oxidation in H2O