Temperature-Dependent Photoluminescence of Highly Strained InGaAsN/GaAs Quantum Wells (λ= 1.28-1.45μm) with GaAsP Strain-Compensated Layers
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
著者
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Kuo Hao-chung
Department Of Photonics And Institute Of Electro-optical Engineering National Chiao Tung University
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Lai Fang-i
Department Of Electronic Engineering Ching Yun University
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Lai Fang-i.
Department Of Electronic Engineering Ching Yun University
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