Simulation of InGaN Quantum Well Laser Performance Using Quaternary InAlGaN Alloy as Electronic Blocking Layer
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-11-30
著者
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LIN Chia-Feng
Department of Materials Science and Engineering, National Chung Hsing University
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Kuo Hao-chung
Department Of Photonics And Institute Of Electro-optical Engineering National Chiao Tung University
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Kuo Hao‐chung
National Chiao Tung Univ. Hsinchu Twn
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Kuo Hao-chung
Institute Of Electro-optical Engineering National Chiao Tung University
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Wang S‐c
Department Of Photonics And Institute Of Electro-optical Engineering National Chiao Tung University
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Lin C‐f
National Chiao Tung Univ. Hsinchu Twn
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Lin Chia-feng
Institute Of Electro-optical Engineering National Chiao Tung University
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CHANG Yi-An
Institute of Electro-Optical Engineering, National Chiao-Tung University
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LUO Chuan-Yu
Institute of Electro-Optical Engineering, National Chiao-Tung University
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KUO Yen-Kuang
Department of Physics, National Changhua University of Education
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WANG Shing-Chung
Institute of Electro-Optical Engineering, National Chiao-Tung University
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Yu Chang-chin
Institute Of Electro-optical Engineering National Chiao Tung University
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Luo Chuan-yu
Institute Of Electro-optical Engineering National Chiao-tung University
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Wang Shing-chung
Institute Of Electro-optical Engineering National Chiao Tung University
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Kuo Yen-kuang
Department Of Physics National Changhua University Of Education
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Lin Chia-feng
Department Of Materials Engineering National Chung Hsing University
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