Band-Gap Bowing Parameter of the InxGa1-xN Derived From Theoretical Simulation
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概要
- 論文の詳細を見る
The band-gap energy and band-gap bowing parameter of the wurtzite InGaN alloys are investigated numerically with the CASTEP simulation program. The simulation results suggest that the unstrained band-gap bowing parameter for the wurtzite InGaN alloys is $b=1.21\pm 0.03$ eV@. The simulation results also show that the width of the InxGa1-xN top valence band at the $\Gamma$ point decreases when the indium composition increases and has a value of 7.331 eV for the GaN ($x=0$) and 6.972 eV for the In0.375Ga0.625N ($x=0.375$).
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2001-05-15
著者
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Lin Wen-wei
Department Of Mathematics National Tsing Hua University
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Lin Wen-wei
Department Of Physics National Changhua University Of Education
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Kuo Yen-kuang
Department Of Physics National Changhua University Of Education
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Lin Jiann
Department of Physics, National Changhua University of Education, Changhua 50058, Taiwan, R.O.C.
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Lin Jiann
Department Of Physics National Changhua University Of Education
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