Band-Gap Bowing Parameters of the Zincblende Ternary III–Nitrides Derived from Theoretical Simulation

スポンサーリンク

概要

• 論文の詳細を見る

• The band-gap bowing parameters of unstrained zincblende ternary III–nitride alloys are investigated numerically with the CASTEP simulation program. Direct and indirect band-gap bowing parameters of 1.379 eV and 1.672 eV for InxGa1-xN, 0.755 eV and 0.296 eV for AlxGa1-xN, and 2.729 eV and 3.624 eV for AlxIn1-xN are obtained. Simulation results show that the direct band-gap energy is always smaller than its indirect counterpart for InxGa1-xN, indicating that the zincblende InxGa1-xN is a direct band-gap semiconductor. There is a direct-indirect crossover near $x=0.571$ for AlxGa1-xN, and $x=0.244$ for AlxIn1-xN. The relationship between band-gap energy and lattice constant for zincblende InxGa1-xN, AlxGa1-xN, and AlxIn1-xN is also provided.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 2004-01-15

著者

• Lin Wen-wei

  Department Of Mathematics National Tsing Hua University

• Kuo Yen-kuang

  Department Of Physics National Changhua University Of Education

• Liou Bo-Ting

  Department of Physics, National Changhua University of Education, Changhua 50058, Taiwan, R.O.C.

• Lin Wen-Wei

  Department of Physics, National Changhua University of Education, Changhua 50058, Taiwan, R.O.C.

• Liou Bo-Ting

  Department of Mechanical Engineering, Hsiuping Institute of Technology, Taichung 41283, Taiwan

関連論文

• Simulation of InGaN Quantum Well Laser Performance Using Quaternary InAlGaN Alloy as Electronic Blocking Layer
• Band-Gap Bowing Parameter of the Al_xGa_N Derived from Theoretical Simulation(Semiconductors)
• Numerical Study on Lateral Mode Behavior of 660-nm InGaP/AlGaInP Multiple-Quantum-Well Laser Diodes
• Simulation of Ho:CaF_2 Q-switched Tm:Y_3Al_5O_ Laser
• Numerical Study on Passive Q-Switching of Tunable Cr:LiCAF Laser with Cr:YSO Solid State Saturable Absorber : Optics and Quantum Electronics
• Chaotic Behaviors of Bistable Laser Diodes and Its Application in Synchronization of Optical Communication : Optics and Quantum Electronics
• Absorption Anisotropy for Lattice Matched GaAs/AlGaAs Multiple Quantum Well Structures under External Anisotropic Biaxial Strain : Compression along[110]and Tension along [110]
• Cr:YSO Saturable Absorber for the Three-Level Cr:BeAl_2O_4 Laser at 680.4nm
• Tunable Cr:YSO Q-Switched Cr:BeAl_2O_4 Laser:Numerical Study on Laser Performance along Three Principal Axes of the Q Switch
• Band-Gap Bowing Parameter of the Al_xIn_N Derived from Theoretical Simulation
• Band-Gap Bowing Parameter of the InxGa1-xN Derived From Theoretical Simulation
• Laser Chaos Induced by Delayed-Feedback and External Modulation
• Band-Gap Bowing Parameters of the Zincblende Ternary III–Nitrides Derived from Theoretical Simulation
• FM Detection from an Optical Chaotic Carrier
• Numerical Study on Optimization of Active Regions for 1.3 μm AlGaInAs and InGaAsN Material Systems

もっと見る 閉じる

スポンサーリンク