Numerical Study on Optimization of Active Regions for 1.3 μm AlGaInAs and InGaAsN Material Systems
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概要
- 論文の詳細を見る
The peak material gains of 1.3 μm semiconductor material systems are numerically studied with a LASTIP simulation program. Specifically, the optical properties of the AlGaInAs and InGaAsN material systems are investigated. Simulation results suggest that, using a p-type AlInAs electron stopper layer, improved temperature dependence of slope efficiency in the operating temperature range from 25 to 85 °C can be obtained for a ridge-waveguide AlGaInAs/InP laser structure. On the other hand, using a strain-compensated active region consisting of In0.36Ga0.64As0.99N0.01 (6 nm)/GaAs0.99N0.01 (10 nm), a high laser performance and stimulated emission characteristics can be achieved for a ridge-waveguide InGaAsN/GaAs laser structure.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-03-15
著者
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Chen Hsiu-fen
Department Of Physics National Changhua University Of Education
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Kuo Yen-kuang
Department Of Physics National Changhua University Of Education
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Chen Hsiu-Fen
Department of Physics, National Changhua University of Education, Changhua 500, Taiwan, R.O.C.
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Hsieh Shang-Wei
Department of Physics, National Changhua University of Education, Changhua 500, Taiwan, R.O.C.
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