Fabricated InGaN Membranes through a Wet Lateral Etching Process
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概要
- 論文の詳細を見る
Epitaxial layers of InGaN light-emitting diodes (LED) were separated from undoped GaN/sapphire structures through a wet lift-off process. A 0.1-μm-thick Si-heavy-doped GaN:Si (n<sup>+</sup>-GaN) layer was inserted in the InGaN LED structure that acted as a sacrificial layer for a lateral wet etching process. The lateral etching rate of the n<sup>+</sup>-GaN sacrificial layer was 315 μm/h. The Fabry--Pérot interferences of the lift-off InGaN LED membranes were observed in the angle-resolved photoluminescence spectra that indicated that the lift-off InGaN membranes had a flat etched surface. High light extraction efficiency, narrow divergent angle, and flat wet-etched GaN surface were observed on the lift-off InGaN membrane.
- 2013-08-25
著者
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Jiang Ren-hao
Department Of Materials Science And Engineering National Chung Hsing University
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Huang Yu-chieh
Department Of Materials Science And Engineering National Chung Hsing University
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Lin Chia-feng
Department Of Materials Engineering National Chung Hsing University
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Shieh Bing-cheng
Department Of Materials Science And Engineering National Chung Hsing University
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Lai Chun-Feng
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C.
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Tseng Wang-Po
Department of Materials Science and Engineering, National Chung Hsing University, Taichung 402, Taiwan
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Cheng Po-Fu
Department of Materials Science and Engineering, National Chung Hsing University, Taichung 402, Taiwan
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Wu Kaun-Chun
Department of Materials Science and Engineering, National Chung Hsing University, Taichung 402, Taiwan
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Wang Jing-Hao
Department of Materials Science and Engineering, National Chung Hsing University, Taichung 402, Taiwan
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Lin Chia-Feng
Department of Materials Science and Engineering, National Chung Hsing University, Taichung 402, Taiwan
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Lai Chun-Feng
Department of Photonics, Feng Chia University, 100, Wenhwa Road, Seatwen, Taichung 40724, Taiwan
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Huang Yu-Chieh
Department of Materials Science and Engineering, National Chung Hsing University, Taichung 402, Taiwan
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Huang Kun-Pin
Department of Materials Science and Engineering, National Chung Hsing University, Taichung 402, Taiwan
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Shieh Bing-Cheng
Department of Materials Science and Engineering, National Chung Hsing University, Taichung 402, Taiwan
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WU Kaun-Chun
Department of Materials Science and Engineering, National Chung Hsing University
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TSENG Wang-Po
Department of Materials Science and Engineering, National Chung Hsing University
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CHENG Po-Fu
Department of Materials Science and Engineering, National Chung Hsing University
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WANG Jing-Hao
Department of Materials Science and Engineering, National Chung Hsing University
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