Enhanced the Light Extraction Efficiency of an InGaN Light Emitting Diodes with an Embedded Rhombus-Like Air-Void Structure
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概要
- 論文の詳細を見る
- 2010-07-25
著者
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DAI Jing-Jie
Department of Materials Science and Engineering, National Chung Hsing University
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LIN Chia-Feng
Department of Materials Science and Engineering, National Chung Hsing University
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WANG Guei-Miao
Department of Materials Science and Engineering, National Chung Hsing University
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LIN Ming-Shiou
Department of Materials Science and Engineering, National Chung Hsing University
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Dai Jing-jie
Department Of Materials Science And Engineering National Chung Hsing University
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Lin Chia-feng
Department Of Materials Science And Engineering National Chung Hsing University
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Wang Guei-miao
Department Of Materials Science And Engineering National Chung Hsing University
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Lin Ming-shiou
Department Of Materials Science And Engineering National Chung Hsing University
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Lin Chia-feng
Department Of Materials Engineering National Chung Hsing University
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Dai Jing-jie
Department Of Materials Engineering National Chung Hsing University
関連論文
- Enhanced the Light Extraction Efficiency of an InGaN Light Emitting Diodes with an Embedded Rhombus-Like Air-Void Structure
- Chemical Lift-Off Process for Blue Light-Emitting Diodes
- Simulation of InGaN Quantum Well Laser Performance Using Quaternary InAlGaN Alloy as Electronic Blocking Layer
- An AlN Sacrificial Buffer Layer Inserted into the GaN/Patterned Sapphire Substrate for a Chemical Lift-Off Process
- Chemical-mechanical lift-off process for InGaN epitaxial layers
- Fabrication the Nanoporous InGaN-based Light-Emitting Diodes
- Fabrication InGaN Nano-disk Structure in GaN Reverse Hexagonal Pyramid
- Chemical-Mechanical Lift-Off Process for InGaN Epitaxial Layers
- Fabrication InGaN Nanodisk Structure in GaN Reverse Hexagonal Pyramid
- InGaN Light-Emitting Diode with a Nanoporous/Air-Channel Structure
- Enhancement of Light Extraction Efficiency of InGaN Light-Emitting Diodes with an Air-Hole-Array Structure
- Micro-Square-Array InGaN-Based Light-Emitting Diode with an Insulated Ga2O3 Layer through a Photoelectrochemical Process
- Fabricated InGaN Membranes through a Wet Lateral Etching Process
- InGaN Light-Emitting Diode with a Nanoporous/Air-Channel Structure