Chemical-Mechanical Lift-Off Process for InGaN Epitaxial Layers
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概要
- 論文の詳細を見る
- 2011-06-25
著者
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Dai Jing-jie
Department Of Materials Science And Engineering National Chung Hsing University
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Lin Chia-feng
Department Of Materials Science And Engineering National Chung Hsing University
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Wang Guei-miao
Department Of Materials Science And Engineering National Chung Hsing University
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Lin Ming-shiou
Department Of Materials Science And Engineering National Chung Hsing University
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Lin Chia-feng
Department Of Materials Engineering National Chung Hsing University
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Wuu D.
Department Of Electrical Engineering Da-yeh University
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Dai Jing-jie
Department Of Materials Engineering National Chung Hsing University
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Huang Wan-chun
Department Of Materials Science And Engineering National Chung Hsing University
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SHIEH Bing-Cheng
Department of Materials Science and Engineering, National Chung Hsing University
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CHANG Shou-Yi
Department of Materials Science and Engineering, National Chung Hsing University
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LIU Po-Liang
Institute of Precision Engineering, National Chung Hsing University
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HORNG Ray-Hua
Department of Electro-Optical Engineering, National Cheng Kung University
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Chang Shou-yi
Department Of Materials Science And Engineering National Chung Hsing University
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Chang Shou-yi
Department Of Materials Engineering National Chung Hsing University
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Liu Po-liang
Institute Of Precision Engineering National Chung Hsing University
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Horng Ray-hua
Department Of Electro-optical Engineering National Cheng Kung University
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Wuu D.
Department Of Materials Science And Engineering National Chung Hsing University
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Shieh Bing-cheng
Department Of Materials Science And Engineering National Chung Hsing University
関連論文
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- Chemical Lift-Off Process for Blue Light-Emitting Diodes
- Simulation of InGaN Quantum Well Laser Performance Using Quaternary InAlGaN Alloy as Electronic Blocking Layer
- An AlN Sacrificial Buffer Layer Inserted into the GaN/Patterned Sapphire Substrate for a Chemical Lift-Off Process
- Chemical-mechanical lift-off process for InGaN epitaxial layers
- Fabrication the Nanoporous InGaN-based Light-Emitting Diodes
- Fabrication InGaN Nano-disk Structure in GaN Reverse Hexagonal Pyramid
- Enhanced Extraction Efficiency of Vertical Conducting InGaN LEDs with Micro-Pillar Surface
- GaN-Based Green Resonant Cavity Light Emitting Diodes
- Characteristics of Flip-Chip InGaN LEDs on Patterned Sapphire Substrates
- Surface texturing for wafer-bonded GaN/mirror/Si light-emitting diodes
- Near-Ultraviolet InGaN LEDs Grown on Patterned Sapphire Substrates
- Chemical-Mechanical Lift-Off Process for InGaN Epitaxial Layers
- High-Brightness Wafer-Bonded ITO/AlGaInP/Mirror/Si Light Emitting Diodes
- Analyses of Interface Adhesion between Cu and SiCN Etch Stop Layers by Nanoindentation and Nanoscratch Tests
- Fabrication InGaN Nanodisk Structure in GaN Reverse Hexagonal Pyramid
- Analyses of Interface Adhesion between Cu and SiCN Etch Stop Layers by Nanoindentation and Nanoscratch Tests
- InGaN Light-Emitting Diode with a Nanoporous/Air-Channel Structure
- Enhancement of Light Extraction Efficiency of InGaN Light-Emitting Diodes with an Air-Hole-Array Structure
- Micro-Square-Array InGaN-Based Light-Emitting Diode with an Insulated Ga2O3 Layer through a Photoelectrochemical Process
- Fabricated InGaN Membranes through a Wet Lateral Etching Process
- InGaN Light-Emitting Diode with a Nanoporous/Air-Channel Structure