Enhancement of Light Extraction Efficiency of InGaN Light-Emitting Diodes with an Air-Hole-Array Structure

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概要

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• The truncated-conical air-hole (TAH) array structure of an InGaN light-emitting diode (LED) was fabricated on the mesa-edge region to increase the light extraction efficiency. The fabrication consisted of a dry process and a crystallographic wet etching process on the AlN buffer layer to form a truncated-conical air-hole array pattern. The light output power of the TAH-LED structure has a 55% enhancement compared with the conventional LED structure at 20 mA operation current. At 20 mA operation current, the forward voltage and peak electroluminescence wavelength of the TAH-LED were measured to be 3.09 V and 455.6 nm, respectively, similar to those of the conventional LED structure because the truncated-conical air-hole array pattern was fabricated around the mesa-edge region without affecting the current injection area with a top transparent contact layer.

• 2012-01-25

著者

• Wang Guei-miao

  Department Of Materials Science And Engineering National Chung Hsing University

• Huang Yu-chieh

  Department Of Materials Science And Engineering National Chung Hsing University

• Lin Chia-feng

  Department Of Materials Engineering National Chung Hsing University

• Chen Sy-hann

  Department Of Electrophysics National Chiayi University

• Chen Sy-Hann

  Department of Electrophysics, National Chiayi University, Chiayi 600, Taiwan

• Yang Zong-Zhe

  Graduate Institute of Textile Engineering, Feng Chia University, Taichung 407, Taiwan

関連論文

• Enhanced the Light Extraction Efficiency of an InGaN Light Emitting Diodes with an Embedded Rhombus-Like Air-Void Structure
• Chemical Lift-Off Process for Blue Light-Emitting Diodes
• Simulation of InGaN Quantum Well Laser Performance Using Quaternary InAlGaN Alloy as Electronic Blocking Layer
• An AlN Sacrificial Buffer Layer Inserted into the GaN/Patterned Sapphire Substrate for a Chemical Lift-Off Process
• Fabrication the Nanoporous InGaN-based Light-Emitting Diodes
• Fabrication InGaN Nano-disk Structure in GaN Reverse Hexagonal Pyramid
• Chemical-Mechanical Lift-Off Process for InGaN Epitaxial Layers
• Fabrication InGaN Nanodisk Structure in GaN Reverse Hexagonal Pyramid
• InGaN Light-Emitting Diode with a Nanoporous/Air-Channel Structure
• Enhancement of Light Extraction Efficiency of InGaN Light-Emitting Diodes with an Air-Hole-Array Structure
• Light Enhancement of Plasmonic Nanostructures for Polymer Light-Emitting Diodes at Different Wavelengths
• Micro-Square-Array InGaN-Based Light-Emitting Diode with an Insulated Ga2O3 Layer through a Photoelectrochemical Process
• Fabricated InGaN Membranes through a Wet Lateral Etching Process
• InGaN Light-Emitting Diode with a Nanoporous/Air-Channel Structure

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