Micro-Square-Array InGaN-Based Light-Emitting Diode with an Insulated Ga2O3 Layer through a Photoelectrochemical Process

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概要

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• InGaN-based micro-square-array light emitting diode (MSA-LED) was fabricated by filling with an insulated Ga2O3 layer around the individual micro-square patterns for a metal interconnected process. The Ga2O3 layer formed at the mesa sidewall and the bottom etched surface of the n-type GaN layer in the LED structure through a selective photoelectrochemical (PEC) wet oxidation process in H2O solution. The 25- and 15-μm-square mesa patterns of the MSA-LED structures were defined by the plasma dry and the PEC wet etching processes that a conventional broad-area LED (BA-LED) was closed to the MSA-LED for comparison. The peak wavelength blueshift of the electroluminescence spectra and the enhancement of the light output power were measured at 1.0 nm/41% and 2.5 nm/22% for the 25- and 15-μm-MSA-LED, respectively, compared with the BA-LED. The reverse leakage current of both MSA-LED structures was about 2.5\times 10^{-11} A that was lower than the BA-LED (8.3\times 10^{-9} A) at -5 V reverse bias. The PEC Ga2O3 layer acted a passivation layer to prevent the leakage current from the mesa sidewall surface and an interconnect process in the MSA-LED structures.

• 2012-01-25

著者

• Jiang Ren-hao

  Department Of Materials Science And Engineering National Chung Hsing University

• LIN Chun-Min

  Department of Materials Science and Engineering, National Chung Hsing University

• Lin Chia-feng

  Department Of Materials Engineering National Chung Hsing University

• Jiang Ren-Hao

  Department of Materials Science and Engineering, National Chung Hsing University, Taichung 402, Taiwan

• Lin Chun-Min

  Department of Materials Science and Engineering, National Chung Hsing University, Taichung 402, Taiwan

関連論文

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• Simulation of InGaN Quantum Well Laser Performance Using Quaternary InAlGaN Alloy as Electronic Blocking Layer
• An AlN Sacrificial Buffer Layer Inserted into the GaN/Patterned Sapphire Substrate for a Chemical Lift-Off Process
• Fabrication the Nanoporous InGaN-based Light-Emitting Diodes
• Fabrication InGaN Nano-disk Structure in GaN Reverse Hexagonal Pyramid
• Chemical-Mechanical Lift-Off Process for InGaN Epitaxial Layers
• Fabrication InGaN Nanodisk Structure in GaN Reverse Hexagonal Pyramid
• InGaN Light-Emitting Diode with a Nanoporous/Air-Channel Structure
• Enhancement of Light Extraction Efficiency of InGaN Light-Emitting Diodes with an Air-Hole-Array Structure
• Micro-Square-Array InGaN-Based Light-Emitting Diode with an Insulated Ga2O3 Layer through a Photoelectrochemical Process
• Fabricated InGaN Membranes through a Wet Lateral Etching Process
• InGaN Light-Emitting Diode with a Nanoporous/Air-Channel Structure

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