High-Brightness Wafer-Bonded ITO/AlGaInP/Mirror/Si Light Emitting Diodes
スポンサーリンク
概要
- 論文の詳細を見る
- 2000-08-28
著者
-
Horng R.
Institute Of Precision Engineering National Chung Hsing University
-
Peng W.
Department of Zoology, National University of Singapore
-
Wuu D.
Department Of Electrical Engineering Da-yeh University
-
LIEN Y.
Department of Electrical Engineering, Da-Yeh University
-
Lien Y.
Department Of Electrical Engineering Da-yeh University
-
Peng W.
Department Of Zoology National University Of Singapore
関連論文
- Differences in the Responses of Two Mudskippers to Terrestrial Exposure
- Enhanced Extraction Efficiency of Vertical Conducting InGaN LEDs with Micro-Pillar Surface
- GaN-Based Green Resonant Cavity Light Emitting Diodes
- Characteristics of Flip-Chip InGaN LEDs on Patterned Sapphire Substrates
- Surface texturing for wafer-bonded GaN/mirror/Si light-emitting diodes
- Near-Ultraviolet InGaN LEDs Grown on Patterned Sapphire Substrates
- Is the Coelomic Plasma of Phascolosoma arcuatum (Sipuncula) Hyperosmotic and Hypoionic in Chloride to the External Environment?
- Chemical-Mechanical Lift-Off Process for InGaN Epitaxial Layers
- Wafer-Bonded AlGaInP/Au/AuBe/SiO2/Si Light-Emitting Diodes
- High-Brightness Wafer-Bonded ITO/AlGaInP/Mirror/Si Light Emitting Diodes
- Thinning technology for lithium niobate wafer by surface activated bonding and chemical mechanical polishing