Study of InGaN Multiple Quantum Dots by Metal Organic Chemical Vapor Deposition
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概要
- 論文の詳細を見る
We reports a study of InGaN multiple quantum dot layers. Using the in-situ SiNx treatment process, InGaN multiple quantum dot layers were successfully developed. The InGaN multiple quantum dot layers were constructed with SiNx dot mask layers, InGaN dot layers, and GaN cap layers on a 2-μm-thick GaN underlying layer on a sapphire substrate. Optical properties including room temperature photoluminescence (PL), temperature dependent PL, and low power power-dependent PL were examined and discussed. The structure was also analyzed by transmission electron microscopy (TEM) and energy dispersive X-ray (EDX) line scan.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-04-30
著者
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Kuo Hao-chung
Institute Of Electro-optical Engineering National Chiao Tung University
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Tsai Min-ying
Institute Of Electro-optical Engineering National Chiao Tung University
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Yang Jer-ren
Institute Of Materials Science And Engineering National Taiwan University
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Tsai Ching-en
Opto-electronics And System Laboratories Industrial Technology Research Institute
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Hsu Jung-tsung
Opto-electronics And System Laboratories Industrial Technology Research Institute
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Wang Te-Chung
Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, Taiwan, Republic of China
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Kuo Hao-Chung
Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, Taiwan, Republic of China
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Tsai Min-Ying
Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, Taiwan, Republic of China
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Lu Tien-Chang
Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, Taiwan, Republic of China
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Yang Jer-Ren
Institute of Materials Science and Engineering, National Taiwan University, Taipei, Taiwan, Republic of China
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Hsu Jung-Tsung
Opto-Electronics and System Laboratories, Industrial Technology Research Institute, Hsinchu, Taiwan, Republic of China
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Tsai Ching-En
Opto-Electronics and System Laboratories, Industrial Technology Research Institute, Hsinchu, Taiwan, Republic of China
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