Observation of V Defects in Multiple InGaN/GaN Quantum Well Layers
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概要
- 論文の詳細を見る
- Japan Institute of Metalsの論文
- 2007-05-01
著者
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SHIOJIRI Makoto
Kyoto Institute of Technology
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CHUO Chang-Cheng
Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute
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Yang Jer-ren
Institute Of Materials Science And Engineering National Taiwan University
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Wang Ting-yu
Institute Of Materials Science And Engineering National Taiwan University
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Shiojiri M
Kyoto Institute Of Technology
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TSAI Hung-Ling
Institute of Materials Science and Engineering, National Taiwan University
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HSU Jung-Tsung
Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute
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FENG Zhe-Chuan
Graduate Institute of Electro-Optical Engineering and Department of Electrical Engineering, National
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Tsai Hung-ling
Institute Of Materials Science And Engineering National Taiwan University
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Feng Zhe-chuan
Graduate Institute Of Electro-optical Engineering And Department Of Electrical Engineering National
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Shiojiri Makoto
Professor Emeritus Of Kyoto Institute Of Technology
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Hsu Jung-tsung
Electronics And Optoelectronics Research Laboratories Industrial Technology Research Institute
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Chuo Chang-cheng
Electronics And Optoelectronics Research Laboratories Industrial Technology Research Institute
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- PREFACE
- Ultra-Fast Spectrometric Cathodoluminescence Scanning Microscopy for Materials Analysis
- A Transmission Electron Microscopy Observation of Dislocations in GaN Grown on (0001) Sapphire by Metal Organic Chemical Vapor Deposition
- Study of InGaN Multiple Quantum Dots by Metal Organic Chemical Vapor Deposition
- Anomalous Optical Characteristics of Carrier Transfer Process in Quaternary AlInGaN Multiple Quantum Well Heterostructure
- Temperature-Dependent Excitonic Luminescence in ZnO Thin Film Grown by Metal Organic Chemical Vapor Deposition