The Observation of Anomalous Optical Berthelot-type Behaviors in Quaternary AlInGaN Semiconductor Heterosystems
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概要
- 論文の詳細を見る
- 2006-09-13
著者
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NEE Tzer-En
Department of Electronic Engineering, Chang Gung University
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HUNG Cheng-Wei
Department of Electronic Engineering, Chang Gung University
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KE Chih-Chun
Department of Electronic Engineering, Chang Gung University
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CHUO Chang-Cheng
Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute
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LEE Zheng-Hong
Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute
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Nee Tzer-en
Department Of Electronic Engineering Chang Gung University
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Lee Zheng-hong
Electronics And Optoelectronics Research Laboratories Industrial Technology Research Institute
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Hung Cheng-wei
Department Of Electronic Engineering Chang Gung University
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Ke Chih-chun
Department Of Electronic Engineering Chang Gung University
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Chuo Chang-cheng
Electronics And Optoelectronics Research Laboratories Industrial Technology Research Institute
関連論文
- Effect of Multiquantum Barriers on Carrier Transport Mechanism of InGaN/GaN Multiple Quantum Well Light-emitting Diodes
- Anomalous Electroluminescence Phenomena in InGaN/GaN Multiple Quantum Well Light-emitting Diodes with Electron Tunneling Layer
- Enhancement of Carrier Confinement by the Multiquantum Barriers in Blue InGaN/GaN Multiple Quantum Well Light-emitting Diodes
- The Observation of Anomalous Optical Berthelot-type Behaviors in Quaternary AlInGaN Semiconductor Heterosystems
- Observation of V Defects in Multiple InGaN/GaN Quantum Well Layers
- Electroluminescence Phenomena in InGaN/GaN Multiple Quantum Well Light-Emitting Diodes with Electron Tunneling Layer
- Influences of Multiquantum Barriers on Carrier Recombination in InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes
- Phonon-Assisted Auger Recombination Processes in InGaAs/GaAs Single-Quantum-Well Lasers
- Anomalous Optical Characteristics of Carrier Transfer Process in Quaternary AlInGaN Multiple Quantum Well Heterostructure