Enhancement of Carrier Confinement by the Multiquantum Barriers in Blue InGaN/GaN Multiple Quantum Well Light-emitting Diodes
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概要
- 論文の詳細を見る
- 2006-09-13
著者
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Shen Hui-tang
Department Of Electronic Engineering Chang Gung University
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WANG Jen-Cheng
Department of Electronic Engineering, Chang Gung University
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NEE Tzer-En
Department of Electronic Engineering, Chang Gung University
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Nee Tzer-en
Department Of Electronic Engineering Chang Gung University
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Wang Jen-cheng
Department Of Electronic Engineering Chang Gung University
関連論文
- Effect of Multiquantum Barriers on Carrier Transport Mechanism of InGaN/GaN Multiple Quantum Well Light-emitting Diodes
- Anomalous Electroluminescence Phenomena in InGaN/GaN Multiple Quantum Well Light-emitting Diodes with Electron Tunneling Layer
- Influences of multiquantum barriers on carrier recombination in InGaN/GaN multiple-quantum-well light-emitting diodes (Special issue: Solid state devices and materials)
- Enhancement of Carrier Confinement by the Multiquantum Barriers in Blue InGaN/GaN Multiple Quantum Well Light-emitting Diodes
- The Observation of Anomalous Optical Berthelot-type Behaviors in Quaternary AlInGaN Semiconductor Heterosystems
- Electroluminescence Phenomena in InGaN/GaN Multiple Quantum Well Light-Emitting Diodes with Electron Tunneling Layer
- Influences of Multiquantum Barriers on Carrier Recombination in InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes
- Phonon-Assisted Auger Recombination Processes in InGaAs/GaAs Single-Quantum-Well Lasers
- Anomalous Optical Characteristics of Carrier Transfer Process in Quaternary AlInGaN Multiple Quantum Well Heterostructure