Electroluminescence Phenomena in InGaN/GaN Multiple Quantum Well Light-Emitting Diodes with Electron Tunneling Layer
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概要
- 論文の詳細を見る
The phenomena of electroluminescence in InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) with an n-AlGaN layer and a superlattice of 10 periods of InGaN (10 Å)/GaN (15 Å) serving as the electron tunneling layer (ETL) have been investigated in detail over a broad temperature range from 20 to 300 K at various injection currents. Compared with conventional LEDs with a well-designed ETL, quantum efficiency and temperature insensitivity are found to be improved when an n-AlGaN layer is inserted. This is attributed to the localization effect of the n-AlGaN layer being stronger than that of the ETL layer, as analyzed using the Varshini formula and band-tail model. Nevertheless, the inserted ETL layer with the purpose of improving the carrier injection into the active layer not only increases the carrier recombination quantity, which leads to a marked increase in output light emission intensity, but also reduces the light emission intensity compared with sample with the n-AlGaN layer. Consequently, inserting a blocking layer between an active layer and a p-GaN layer may increase the output light emission intensity of the sample with an ETL.
- 2008-09-25
著者
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Shen Hui-tang
Department Of Electronic Engineering Chang Gung University
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Wu Ya-fen
Department Of Electrical Engineering Technology And Science Institute Of Northern Taiwan
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Nee Tzer-en
Department Of Electronic Engineering Chang Gung University
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Cheng Kung-yu
Department Of Electronic Engineering Chang Gung University
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Wang Jen-cheng
Department Of Electronic Engineering Chang Gung University
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Chen Hui-yui
Department Of Electronic Engineering Chang Gung University
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Jiang Joe-air
Department Of Bio-industrial Mechatronics Engineering National Taiwan University
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Fan Ping-Lin
Department of Digital Technology Design and Graduate School of Toy and Game Design, National Taipei University of Education, Taipei 106, Taiwan, Republic of China
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Chen Wan-Yi
Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan, Tao-Yuan 333, Taiwan, Republic of China
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Wang Jen-Cheng
Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan, Tao-Yuan 333, Taiwan, Republic of China
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Cheng Kung-Yu
Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan, Tao-Yuan 333, Taiwan, Republic of China
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Shen Hui-Tang
Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan, Tao-Yuan 333, Taiwan, Republic of China
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Chen Hui-Yui
Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan, Tao-Yuan 333, Taiwan, Republic of China
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Wu Ya-Fen
Department of Electrical Engineering, Technology and Science Institute of Northern Taiwan, Taipei 112, Taiwan, Republic of China
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