Influences of Multiquantum Barriers on Carrier Recombination in InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes
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概要
- 論文の詳細を見る
The influences of multiquantum barriers (MQBs) on the carrier confinement and carrier recombination in blue InGaN/GaN multiple-quantum-well (MQW) light-emitting diodes (LEDs) have been investigated in depth over a broad range of temperatures from 20 to 300 K. Time-resolved photoluminescence (TRPL) temporal decay was measured to examine the dynamics of the carriers in both devices. The exciton recombination times of the blue emission are 2.81 and 4.11 ns for the QWs with MQB and GaN barriers, respectively. The former is a reasonable value for the radiative recombination in the structure with MQBs, and results from the enhancement of the exciton confinement. It was found that a device with an MQB structure exhibited higher emission intensity as well as lower temperature sensitivity than the conventional MQW LEDs. The improvement of the quantum efficiency for the MQB device was attributed to the fact that the enhancement of the excitons was confined in the MQW region and inhibited the carrier overflow into the GaN region.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-04-30
著者
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Shen Hui-tang
Department Of Electronic Engineering Chang Gung University
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Wu Ya-fen
Department Of Electrical Engineering Technology And Science Institute Of Northern Taiwan
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Nee Tzer-en
Department Of Electronic Engineering Chang Gung University
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Wang Jen-cheng
Department Of Electronic Engineering Chang Gung University
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Lu Chien-lin
Department Of Electrical Engineering National Taipei University Of Technology
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Shih Yu-Tai
Department of Physics and Graduate Institute of Photonics, National Changhua University of Education, No. 1, Jin-De Road, Changhua, Taiwan, Republic of China
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Wang Jen-Cheng
Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan, Tao-Yuan, Taiwan, Republic of China
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Shen Hui-Tang
Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan, Tao-Yuan, Taiwan, Republic of China
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Wu Ya-Fen
Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan, Tao-Yuan, Taiwan, Republic of China
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Lu Chien-Lin
Department of Physics and Graduate Institute of Photonics, National Changhua University of Education, No. 1, Jin-De Road, Changhua, Taiwan, Republic of China
関連論文
- Effect of Multiquantum Barriers on Carrier Transport Mechanism of InGaN/GaN Multiple Quantum Well Light-emitting Diodes
- Anomalous Electroluminescence Phenomena in InGaN/GaN Multiple Quantum Well Light-emitting Diodes with Electron Tunneling Layer
- Influences of multiquantum barriers on carrier recombination in InGaN/GaN multiple-quantum-well light-emitting diodes (Special issue: Solid state devices and materials)
- Enhancement of Carrier Confinement by the Multiquantum Barriers in Blue InGaN/GaN Multiple Quantum Well Light-emitting Diodes
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- Influences of Multiquantum Barriers on Carrier Recombination in InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes
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