Anomalous Optical Characteristics of Carrier Transfer Process in Quaternary AlInGaN Multiple Quantum Well Heterostructure
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概要
- 論文の詳細を見る
The carrier-transport characteristics of quaternary AlInGaN heterosystems are studied in-depth using photoluminescence measurements. Based on Singh's model, a higher degree of disorder in quaternary AlInGaN heterostructures is observed to manifest not only the extension of static microbarrier width, but also the enhancement of carrier localization effects. To provide a clear picture of the random configuration of the carriers photogenerated in quaternary AlInGaN heterosystems, the thermodynamic quantities, i.e., the transition enthalpy $\Delta H$ and the transition entropy $\Delta S$, describing the spontaneous fluctuations in the irreversible generation-recombination processes increased with temperature. It is found that the anomalous temperature-dependent phenomena can be attributed to the carrier-thermalization processes. The narrow interlayer distance of an AlInGaN system facilitates thermally excited carrier redistribution. However, due to the inhibition of photocarrier transfers, AlInGaN heterostructures with wider interlayer spacing exhibit more temperature insensitivity.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-04-30
著者
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Shen Hui-tang
Department Of Electronic Engineering Chang Gung University
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Wu Ya-fen
Department Of Electrical Engineering Technology And Science Institute Of Northern Taiwan
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Nee Tzer-en
Department Of Electronic Engineering Chang Gung University
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Lee Zheng-hong
Electronics And Optoelectronics Research Laboratories Industrial Technology Research Institute
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Wang Jen-cheng
Department Of Electronic Engineering Chang Gung University
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Hung Cheng-wei
Department Of Electronic Engineering Chang Gung University
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Ke Chih-chun
Department Of Electronic Engineering Chang Gung University
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Chuo Chang-cheng
Electronics And Optoelectronics Research Laboratories Industrial Technology Research Institute
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Hung Cheng-Wei
Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan, Tao-Yuan, Taiwan, Republic of China
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Lee Zheng-Hong
Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute, Hsin-Chu, Taiwan, Republic of China
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Chuo Chang-Cheng
Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute, Hsin-Chu, Taiwan, Republic of China
関連論文
- Effect of Multiquantum Barriers on Carrier Transport Mechanism of InGaN/GaN Multiple Quantum Well Light-emitting Diodes
- Anomalous Electroluminescence Phenomena in InGaN/GaN Multiple Quantum Well Light-emitting Diodes with Electron Tunneling Layer
- Influences of multiquantum barriers on carrier recombination in InGaN/GaN multiple-quantum-well light-emitting diodes (Special issue: Solid state devices and materials)
- Enhancement of Carrier Confinement by the Multiquantum Barriers in Blue InGaN/GaN Multiple Quantum Well Light-emitting Diodes
- The Observation of Anomalous Optical Berthelot-type Behaviors in Quaternary AlInGaN Semiconductor Heterosystems
- Observation of V Defects in Multiple InGaN/GaN Quantum Well Layers
- Electroluminescence Phenomena in InGaN/GaN Multiple Quantum Well Light-Emitting Diodes with Electron Tunneling Layer
- Effect of Excitonic Interactions on Abnormal Luminescence Behaviour of InGaN/GaN Light-Emitting Diodes with Electron Tunneling Layer
- Influences of Multiquantum Barriers on Carrier Recombination in InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes
- Phonon-Assisted Auger Recombination Processes in InGaAs/GaAs Single-Quantum-Well Lasers
- Anomalous Optical Characteristics of Carrier Transfer Process in Quaternary AlInGaN Multiple Quantum Well Heterostructure