Influences of multiquantum barriers on carrier recombination in InGaN/GaN multiple-quantum-well light-emitting diodes (Special issue: Solid state devices and materials)

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文

著者

• Shen Hui-tang

  Department Of Electronic Engineering Chang Gung University

関連論文

• Effect of Multiquantum Barriers on Carrier Transport Mechanism of InGaN/GaN Multiple Quantum Well Light-emitting Diodes
• Anomalous Electroluminescence Phenomena in InGaN/GaN Multiple Quantum Well Light-emitting Diodes with Electron Tunneling Layer
• Influences of multiquantum barriers on carrier recombination in InGaN/GaN multiple-quantum-well light-emitting diodes (Special issue: Solid state devices and materials)
• Enhancement of Carrier Confinement by the Multiquantum Barriers in Blue InGaN/GaN Multiple Quantum Well Light-emitting Diodes
• Electroluminescence Phenomena in InGaN/GaN Multiple Quantum Well Light-Emitting Diodes with Electron Tunneling Layer
• Influences of Multiquantum Barriers on Carrier Recombination in InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes
• Anomalous Optical Characteristics of Carrier Transfer Process in Quaternary AlInGaN Multiple Quantum Well Heterostructure

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