Effect of Excitonic Interactions on Abnormal Luminescence Behaviour of InGaN/GaN Light-Emitting Diodes with Electron Tunneling Layer

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概要

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• We studied the unique correlations between the electrical and optical characteristics of InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) with n-AlGaN layer and n-InGaN/GaN superlattice electron tunneling layer (ETL). It was found that the ideality factor of the two devices increased with decreasing temperature from 300 to 20 K. Levine's model was used to characterize the anomaly, and the ideality factor could be shown as a function of temperature by $n = 1 + T_{\text{o}}/T$. The device with ETL inherently exhibited a large pseudo-temperature $T_{\text{o}}$ with a large characteristic energy and charge population in the multilayer interface, over wide temperature and voltage ranges. Owing to the more interface state distribution and the less effective density of state (DOS) in the quantum wells, the excitons formed in the ETL sample augment the spectral radiations at temperatures higher than 150 K. The carrier tunneling processes via the extent of charge population consequently caused anomalous $T_{\text{o}}$ and resulted in the abnormal deterioration of the EL intensities with a small density of state.

• 2008-01-25

著者

• Wu Ya-fen

  Department Of Electrical Engineering Technology And Science Institute Of Northern Taiwan

• Chen Nie-chuan

  Institute Of Electro-optical Engineering Chang Gung University

• Nee Tzer-en

  Institute Of Optical Science National Central University

• Hu Yeu-Jent

  Department of Electrical Engineering, Technology and Science Institute of Northern Taiwan, Taipei 112, Taiwan, R.O.C.

• Wang Jen-Cheng

  Institute of Electro-Optical Engineering, Department of Electronic Engineering, Chang Gung University, Kweisan, Taoyuan 333, Taiwan, R.O.C.

• Wu Gwo-Mei

  Institute of Electro-Optical Engineering, Department of Electronic Engineering, Chang Gung University, Kweisan, Taoyuan 333, Taiwan, R.O.C.

• Cheng Kung-Yu

  Institute of Electro-Optical Engineering, Department of Electronic Engineering, Chang Gung University, Kweisan, Taoyuan 333, Taiwan, R.O.C.

• Fang Chia-Hui

  Institute of Electro-Optical Engineering, Department of Electronic Engineering, Chang Gung University, Kweisan, Taoyuan 333, Taiwan, R.O.C.

• Lee Jiunn-Chyi

  Department of Electrical Engineering, Technology and Science Institute of Northern Taiwan, Taipei 112, Taiwan, R.O.C.

• Wu Ya-Fen

  Department of Electrical Engineering, Technology and Science Institute of Northern Taiwan, Taipei 112, Taiwan, R.O.C.

• Chen Nie-Chuan

  Institute of Electro-Optical Engineering, Department of Electronic Engineering, Chang Gung University, Kweisan, Taoyuan 333, Taiwan, R.O.C.

• Nee Tzer-En

  Institute of Electro-Optical Engineering, Department of Electronic Engineering, Chang Gung University, Kweisan, Taoyuan 333, Taiwan, R.O.C.

関連論文

• Effect of Multiquantum Barriers on Carrier Transport Mechanism of InGaN/GaN Multiple Quantum Well Light-emitting Diodes
• Anomalous Electroluminescence Phenomena in InGaN/GaN Multiple Quantum Well Light-emitting Diodes with Electron Tunneling Layer
• Room-Temperature Operation of In_Ga_As Quantum Dot Lasers Grown on Misoriented GaAs Substrates by Molecular Beam Epitaxy
• Photoluminescence Characteristics of Self-Assembled In_Ga_As Quantum Dots on Vicinal GaAs Substrates
• Blue, Green and White InGaN Light-Emitting Diodes Grown on Si
• Excitation Density and Temperature Dependent Photoluminescence of InGaAs Self-Assembled Quantum Dots
• Band Offsets of InN/GaN Interface
• Electroluminescence Phenomena in InGaN/GaN Multiple Quantum Well Light-Emitting Diodes with Electron Tunneling Layer
• Effect of Buffer Layers on Electrical, Optical and Structural Properties of AlGaN/GaN Heterostructures Grown on Si
• Direct Patterning of Silicon Nitride Thin Film by Projection Photoablation for Fabricating Thin-Film Transistor Liquid Crystal Displays
• Measurement of Junction Temperature in a Nitride Light-Emitting Diode
• Effect of Excitonic Interactions on Abnormal Luminescence Behaviour of InGaN/GaN Light-Emitting Diodes with Electron Tunneling Layer
• Influences of Multiquantum Barriers on Carrier Recombination in InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes
• Anomalous Optical Characteristics of Carrier Transfer Process in Quaternary AlInGaN Multiple Quantum Well Heterostructure
• Photoluminescence Characteristics of Self-Assembled In0.5Ga0.5As Quantum Dots on Vicinal GaAs Substrates

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