Temperature-Dependent Excitonic Luminescence in ZnO Thin Film Grown by Metal Organic Chemical Vapor Deposition
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概要
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In this study, the excitonic luminescence behaviors of ZnO thin films in the temperature range of 10–300 K were investigated. The photoluminescence (PL) spectrum exhibits the bound-exciton emission and the donor-acceptor recombination accompanying its multiphonon replicas at low temperatures. The observed features exhibit redshift with an increase in temperature, and the temperature dependence of the peak position was analyzed by the Varshni empirical expression. The study showed the dominant presence of bound excitonic transition below 160 K or free excitonic transition at higher temperatures for the observed PL spectrum. The free exciton emission can be observed up to room temperature. The Debye temperature of ZnO was evaluated by taking into account the elastic constants of ZnO and utilized as a parameter in the Varshni empirical expression giving an accurate description of the free exciton emission behavior up to room temperature.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2009-11-25
著者
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Huang Chia-chih
Department Of Electronic Engineering Tung Nan Institute Of Technology
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Feng Zhe-chuan
Graduate Institute Of Electro-optical Engineering And Department Of Electrical Engineering National
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Hu Sheng-Yao
Department of Electrical Engineering, Tung Fang Institute of Technology, Hunei Township, Kaohsiung County 829, Taiwan, R.O.C.
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Yang Chu-Shou
Graduate Institute in Electro-Optical Engineering, Tatung University, 40 Jhongshan North Road, 3rd Section, Taipei 104, Taiwan
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Huang Chia-Chih
Department of Electronic Engineering, Tungnan University, Taipei 222, Taiwan, R.O.C.
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Yang Chu-Shou
Graduate Institute of Electro-optical Engineering, Tatung University, Taipei 104, Taiwan
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Feng Zhe-Chuan
Graduate Institute of Electro-Optical Engineering and Department of Electrical Engineering, National Taiwan University, Taipei 106, Taiwan, R.O.C.
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Lee Yueh-Chien
Department of Electronic Engineering, Tungnan University, Taipei 222, Taiwan, R.O.C.
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