Fabrication of High Speed Single Mode 1.27μm InGaAs:Sb-GaAsP Quantum Wells Vertical Cavity Surface Emitting Laser

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概要

• 論文の詳細を見る
• 2004-09-15

著者

• Kuo Hao-chung

  Department Of Photonics And Institute Of Electro-optical Engineering National Chiao Tung University

• Kuo Hao‐chung

  National Chiao Tung Univ. Hsinchu Twn

• Kuo Hao-chung

  Institute Of Electro-optical Engineering National Chiao Tung University

• Wang S‐c

  Department Of Photonics And Institute Of Electro-optical Engineering National Chiao Tung University

• WANG Shing-Chung

  Institute of Electro-Optical Engineering, National Chiao-Tung University

• CHANG Ya-Hsien

  Institute of Electro-Optical Engineering, National Chiao Tung University

• LAI Fang-I.

  Institute of Electro-optical Engineering, National Chiao-Tung University

• CHANG Yi-A

  Institute of Electro-optical Engineering, National Chiao-Tung University

• LEE Po-Tsung

  Institute of Electro-optical Engineering, National Chiao-Tung University

• LAIH L.

  M-Comm Corporation

• Lai Fang-i

  Department Of Electronic Engineering Ching Yun University

• Yu Chang-chin

  Institute Of Electro-optical Engineering National Chiao Tung University

• Lai Fang-i.

  Department Of Electronic Engineering Ching Yun University

• Wang Shing-chung

  Institute Of Electro-optical Engineering National Chiao Tung University

• Lee Po-tsung

  Institute Of Electro-optical Engineering National Chiao-tung University

関連論文

• Simulation of InGaN Quantum Well Laser Performance Using Quaternary InAlGaN Alloy as Electronic Blocking Layer
• High Temperature Stability 850-nm In_Al_Ga_As/Al_Ga_As Vertical-Cavity Surface-Emitting Laser with Single Al_Ga_As Current Blocking Layer
• Characterization of InGaN/GaN Multiple Quantum Well Nanorods Fabricated by Plasma Etching with Self-Assembled Nickel Metal Nanomasks
• Fabrication and Micro-Photoluminescence Investigation of Mg-Doped Gallium Nitride Nanorods
• 10Gbps InGaAs:Sb-GaAs-GaAsP Quantum Well Vertical Cavity Surface Emitting Lasers with 1.27μm Emission Wavelengths
• Temperature-Dependent Photoluminescence of Highly Strained InGaAsN/GaAs Quantum Wells (λ= 1.28-1.45μm) with GaAsP Strain-Compensated Layers
• Fabrication of High Speed Single Mode 1.27μm InGaAs:Sb-GaAsP Quantum Wells Vertical Cavity Surface Emitting Laser
• InGaN/GaN Multi-Quantum-Well Nanorods Fabricated by Plasma Etching Using Self-assembled Nickel Nano-masks
• Galliuln Nitride Nanorods Fabricated by Inductively Coupled Plasma Reactive Ion Etching : Semiconductors
• Beryllium-Implanted P-Type GaN With High Carrier Concentration : Semiconductors
• Light-Output Enhancement of GaN-Based Light-Emitting Diodes by Photoelectrochemical Oxidation in H_2O
• Ultraviolet Random Laser Action of Nano-structured Zinc Oxide
• Ultraviolet Lasing of Sol-Gel-Derived Zinc Oxide Polycrystalline Films (Special Issue: Solid State Devices & Materials)
• Ultraviolet Lasing of Sol-Gel Derived Zinc Oxide Polycrystalline Films
• Fabrication of Large-Area GaN-Based Light-Emitting Diodes on Cu Substrate
• Fabrication of large-area GaN Vertical Light Emitting Diodes on Copper Substrates by Laser Lift-off
• Improvement of High-Speed Oxide-Confined Vertical-Cavity Surface-Emitting Lasers
• Single-Mode Vertical-Cavity Surface-Emitting Lasers with a Deep-Etched Half-Ring-Shaped Holey Structure
• Comparison of p-Side Down and o-Side Up GaN Light-Emitting Diodes Fabricatied by Laser Lift-Off
• Light-output Enhanced of GaN-based Light-emitting Diodes by Photoelectrochemical oxidation in H_2O
• High Performances of 650nm Resonant Cavity Light Emitting Diodes for Plastic Optical Fiber Applications
• Strong Ultraviolet Emission from InGaN/AlGaN Multi Quantum Well Grown by Multi-step Process
• Effects of Different n-Electrode Patterns on Optical Characteristics of Large-Area p-Side-Down InGaN Light-Emitting Diodes Fabricated by Laser Lift-Off
• Enhanced Light Output of InGaN/GaN Light Emitting Diode with Excimer Laser Etching on Nano-roughened P-GaN Surface
• Growth of Highly Strained InGaAs Quantum Wells by Metalorganic Chemical Vapor Deposition with Application to Vertical-Cavity Surface-Emitting Laser
• Numerical Study on Lateral Mode Behavior of 660-nm InGaP/AlGaInP Multiple-Quantum-Well Laser Diodes
• Study of InGaN red emission multiple Quantum Dots
• Effect of Annealing on Low-Threshold-Current Large-Wavelength InGaAs Quantum Well Vertical-Cavity Laser
• Low-Threshold-Current-Density, Long-Wavelength, Highly Strained InGaAs Laser Grown by Metalorganic Chemical Vapor Deposition
• Highly Strained InGaAs/GaAs Quantum Well Vertical-Cavity Surface-Emitting Lasers
• Low-Threshold-Current-Density, Long-Wavelength, Highly Strained InGaAs Laser Grown by Metalorganic Chemical Vapor Deposition
• Modeling and Optimization of Sub-Wavelength Grating Nanostructures on Cu(In,Ga)Se Solar Cell (Special Issue : Photovoltaic Science and Engineering)
• Characteristics of Multileaf Holey Light-Emitting Diodes for Fiber-Optic Communications
• High-Power Single-Mode Vertical-Cavity Surface-Emitting Lasers with Multi-Leaf Holey Structure
• Characteristics of Single-Mode InGaAs Submonolayer Quantum-Dot Photonic-Crystal Vertical-Cavity Surface-Emitting Lasers
• Characteristics of P-Substrate Small-Aperture Holey Light-Emitting Diodes for Fiber-Optic Applications
• Characteristics of Cross-Shaped Polarization-Switching Vertical-Cavity Surface-Emitting Lasers for Dual-Channel Communications
• Study of InGaN Multiple Quantum Dots by Metal Organic Chemical Vapor Deposition
• Improvement of High-Speed Oxide-Confined Vertical-Cavity Surface-Emitting Lasers
• Characteristics of Single-Chip GaN-Based Alternating Current Light-Emitting Diode
• Effect of Annealing on Low-Threshold-Current Large-Wavelength InGaAs Quantum Well Vertical-Cavity Laser
• Comparison of p-Side Down and p-Side Up GaN Light-Emitting Diodes Fabricated by Laser Lift-Off

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