Comparison of p-Side Down and p-Side Up GaN Light-Emitting Diodes Fabricated by Laser Lift-Off
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概要
- 論文の詳細を見る
The performance characteristics of laser lift-off (LLO) freestanding InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) mounted on a Cu substrate with p-side up, and p-side down configurations were determined and compared. The InGaN/GaN MQW LED structures, which were originally fabricated on a sapphire substrate, were transferred to a Cu substrate by the LLO process into two different configurations, namely p-side up and p-side down with the same Ni/Pd/Au p-contact metallizations. Both p-side down and p-side up LLO-LEDs showed a higher current operation capability up to 400 mA than the original LEDs on the sapphire substrate. The p-side down LLO-LEDs showed a nearly eightfold increase in the light output power compared to the p-side up LLO-LEDs. The p-side down LLO-LEDs also showed a more stable wavelength emission spectrum than the p-side up ones.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2003-02-15
著者
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Lin Chia-feng
Institute Of Electro-optical Engineering National Chiao Tung University
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Yu Chang-chin
Institute Of Electro-optical Engineering National Chiao Tung University
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Cheng Hao-chun
Institute Of Electro-optical Engineering National Chiao Tung University
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Wang Shing-chung
Institute Of Electro-optical Engineering National Chiao Tung University
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Chu Chen-fu
Institute Of Electro-optical Engineering National Chiao Tung University
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Yu Chang-Chin
Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, Taiwan, R.O.C.
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Cheng Hao-Chun
Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, Taiwan, R.O.C.
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Wang Shing-Chung
Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, Taiwan, R.O.C.
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Chu Chen-Fu
Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, Taiwan, R.O.C.
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