Optical and Photorefraetive Properties of Strongly Reduced BaTiO_3
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1998-11-15
著者
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CHANG Jenq-Yang
Institute of Optical Sciences, National Central University
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Chu C‐f
National Chiao Tung Univ. Hsinchu Twn
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Chang J‐y
Institute Of Optical Sciences National Central University
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Chu Chen-fu
Institute Of Electro-optical Engineering National Chiao Tung University
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HUANG Chi-Yi
Institute of Optical Sciences, National Central University
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Huang Chi-yi
Institute Of Optical Sciences National Central University
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Chang Jenq-yang
Institute Of Optical Sciences National Central University
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YUEH Ruey-Ren
Institute of Optical Sciences, National Central University
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CHANG Jeng-Yang
Institute of Optical Sciences, National Central University
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Yueh Ruey-ren
Institute Of Optical Sciences National Central University
関連論文
- Galliuln Nitride Nanorods Fabricated by Inductively Coupled Plasma Reactive Ion Etching : Semiconductors
- Beryllium-Implanted P-Type GaN With High Carrier Concentration : Semiconductors
- Polarization Switching of Pure and MgO-doped Lithium Niobate Crystals
- Comparison of p-Side Down and o-Side Up GaN Light-Emitting Diodes Fabricatied by Laser Lift-Off
- Gratings in GaN Membranes
- Gallium Nitride Diffractive Microlenses Using in Ultraviolet Micro-Optics System
- Temperature Dependence of Two Beam Coupling, Light-induced Erasure Decay and Dark Decay in As-Grown and Reduced BaTiO_3:Rh : Optical Propertles of Condensed Matter
- Dynamic Double-Exposure Interferometer based on Anisotropic Self-Diffraction in BaTiO_3
- Optical and Photorefraetive Properties of Strongly Reduced BaTiO_3
- Polarization Switching of Pure and MgO-doped Lithium Niobate Crystals
- Gratings in GaN Membranes
- Comparison of p-Side Down and p-Side Up GaN Light-Emitting Diodes Fabricated by Laser Lift-Off