Galliuln Nitride Nanorods Fabricated by Inductively Coupled Plasma Reactive Ion Etching : Semiconductors
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2002-08-15
著者
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Wang S‐c
Department Of Photonics And Institute Of Electro-optical Engineering National Chiao Tung University
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Lin C‐f
National Chiao Tung Univ. Hsinchu Twn
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Lin Chia-feng
Institute Of Electro-optical Engineering National Chiao Tung University
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WANG Shing-Chung
Institute of Electro-Optical Engineering, National Chiao-Tung University
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CHANG Ya-Hsien
Institute of Electro-Optical Engineering, National Chiao Tung University
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HSUEH Tau-Hung
Institute of Electro-Optical Engineering, National Chiao Tung University
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YU Chang-Chin
Institute of Electro-Optical Engineering, National Chiao Tung University
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HUANG Hung-Wen
Institute of Electro-Optical Engineering, National Chiao Tung University
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HSUEH Tao-Hung
Institute of Electro-Optical Engineering, National Chiao Tung University
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CHU Chen-Fu
Institute of Electro-Optical Engineering, National Chiao Tung University
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TSAI Juen-Yen
Institute of Electro-Optical Engineering, National Chiao Tung University
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HUANG Hung
Institute of Electro-Optical Engineering, National Chiao Tung University
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Yu Chang-chin
Institute Of Electro-optical Engineering National Chiao Tung University
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Hsueh Tao-hung
Department Of Photonics & Institute Of Electro-optical Engineering National Chiao Tung Universit
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Wang Shing-chung
Institute Of Electro-optical Engineering National Chiao Tung University
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Chu Chen-fu
Institute Of Electro-optical Engineering National Chiao Tung University
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Tsai Juen-yen
Institute Of Electro-optical Engineering National Chiao Tung University
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Huang Hung
Department Of Photonics & Institute Of Electro-optical Engineering National Chiao Tung Universit
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