10Gbps InGaAs:Sb-GaAs-GaAsP Quantum Well Vertical Cavity Surface Emitting Lasers with 1.27μm Emission Wavelengths

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2005-04-30

著者

• Chu Jung-tang

  Department Of Photonics And Institute Of Electro-optical Engineering National Chiao Tung University

• Kuo Hao-chung

  Department Of Photonics And Institute Of Electro-optical Engineering National Chiao Tung University

• Chang Yi-an

  Department Of Physics National Changhua University Of Education

• Wang S‐c

  Department Of Photonics And Institute Of Electro-optical Engineering National Chiao Tung University

• CHANG Ya-Hsien

  Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University

• WANG Shing-Chung

  Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University

• TSAI Min-Ying

  Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University

関連論文

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• High Temperature Stability 850-nm In_Al_Ga_As/Al_Ga_As Vertical-Cavity Surface-Emitting Laser with Single Al_Ga_As Current Blocking Layer
• Characterization of InGaN/GaN Multiple Quantum Well Nanorods Fabricated by Plasma Etching with Self-Assembled Nickel Metal Nanomasks
• Fabrication and Micro-Photoluminescence Investigation of Mg-Doped Gallium Nitride Nanorods
• 10Gbps InGaAs:Sb-GaAs-GaAsP Quantum Well Vertical Cavity Surface Emitting Lasers with 1.27μm Emission Wavelengths
• Temperature-Dependent Photoluminescence of Highly Strained InGaAsN/GaAs Quantum Wells (λ= 1.28-1.45μm) with GaAsP Strain-Compensated Layers
• Fabrication of High Speed Single Mode 1.27μm InGaAs:Sb-GaAsP Quantum Wells Vertical Cavity Surface Emitting Laser
• InGaN/GaN Multi-Quantum-Well Nanorods Fabricated by Plasma Etching Using Self-assembled Nickel Nano-masks
• Galliuln Nitride Nanorods Fabricated by Inductively Coupled Plasma Reactive Ion Etching : Semiconductors
• Beryllium-Implanted P-Type GaN With High Carrier Concentration : Semiconductors
• Light-Output Enhancement of GaN-Based Light-Emitting Diodes by Photoelectrochemical Oxidation in H_2O
• Ultraviolet Lasing of Sol-Gel Derived Zinc Oxide Polycrystalline Films
• Fabrication of Large-Area GaN-Based Light-Emitting Diodes on Cu Substrate
• Fabrication of large-area GaN Vertical Light Emitting Diodes on Copper Substrates by Laser Lift-off
• Improvement of High-Speed Oxide-Confined Vertical-Cavity Surface-Emitting Lasers
• High Performances of 650nm Resonant Cavity Light Emitting Diodes for Plastic Optical Fiber Applications
• Strong Ultraviolet Emission from InGaN/AlGaN Multi Quantum Well Grown by Multi-step Process
• Effects of Different n-Electrode Patterns on Optical Characteristics of Large-Area p-Side-Down InGaN Light-Emitting Diodes Fabricated by Laser Lift-Off
• Enhanced Light Output of InGaN/GaN Light Emitting Diode with Excimer Laser Etching on Nano-roughened P-GaN Surface
• Numerical Study on Lateral Mode Behavior of 660-nm InGaP/AlGaInP Multiple-Quantum-Well Laser Diodes
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• Strong ultraviolet emission from InGaN/AlGaN multiple quantum well grown by multi-step process (Special issue: Solid state devices and materials)
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• Synthesis and Characterization of Highly Resistive Epitaxial Indium-Doped SnO_2
• Non-Alloyed Schottky and Ohmic Contacts to As-Grown and Oxygen-Plasma Treated n-Type SnO_2 (110) and (101) Thin Films
• Characterization of InGaN/GaN Multiple Quantum Well Nanorods Fabricated by Plasma Etching with Self-Assembled Nickel Metal Nanomasks
• Temperature-Dependent Photoluminescence of Highly Strained InGaAsN/GaAs Quantum Wells ($\lambda = 1.28--1.45$ μm) with GaAsP Strain-Compensated Layers
• 10 Gbps InGaAs:Sb-GaAs-GaAsP Quantum Well Vertical Cavity Surface Emitting Lasers with 1.27 μm Emission Wavelengths
• Fabrication and Characterization of In0.25Ga0.75N/GaN Multiple Quantum Wells Embedded in Nanorods

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