Characterization of InGaN/GaN Multiple Quantum Well Nanorods Fabricated by Plasma Etching with Self-Assembled Nickel Metal Nanomasks

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概要

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• High-density ($3.0\times 10^{10}$ cm-2) InGaN/GaN multiple quantum well (MQW) nanorods were fabricated from an as-grown bulk light-emitting diode structure by inductively coupled plasma dry etching with self-assembled nickel metal nanomasks. The self-assembled nickel metal nanomasks were formed by rapid thermal annealing of a nickel metal film at 850°C for 1 min. The influence of the thicknesses of the Ni metal film on the dimensions and density of the nanorods was also investigated. The structural and optical properties of the InGaN/GaN MQW nanorods were established using field emission scanning electron microscopy, transmission electron microscopy and photoluminescence measurements. The diameters and heights of nanorods were estimated to be 60 to 100 nm and more than 0.28 μm, respectively. The peak emission wavelength of the nanorods showed a blue shift of 5.1 nm from that of the as-grown bulk. An enhancement by a factor of 5 in photoluminescence intensity of the nanorods compared with that of the as-grown bulk was observed. The blue shift is attributed to strain relaxation in the wells after dry etching, the quantum confinement effect, or a combination of the two, which results in the enhancement of emission intensity.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2005-04-15

著者

• Kuo Hao-chung

  Department Of Photonic And Institute Of Electro-optical Engineering National Chiao Tung University

• HSUEH Tao-Hung

  Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University

• HUANG Hung-Wen

  Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University

• KAO Chih-Chiang

  Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University

• CHANG Ya-Hsien

  Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University

• OU-YANG Miao-Chia

  Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University

• Wang Shing-chung

  Department Of Photonic And Institute Of Electro-optical Engineering National Chiao Tung University

• Wang Shing-Chung

  Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University, Hinchu 300, Taiwan, R.O.C.

• Ou-Yang Miao-Chia

  Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University, Hinchu 300, Taiwan, R.O.C.

• Huang Hung-Wen

  Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University, Hinchu 300, Taiwan, R.O.C.

• Kao Chih-Chiang

  Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University, Hinchu 300, Taiwan, R.O.C.

• Chang Ya-Hsien

  Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University, Hinchu 300, Taiwan, R.O.C.

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