Photoluminescence of Plasma Enhanced Chemical Vapor Deposition Amorphous Silicon Oxide with Silicon Nanocrystals Grown at Different Fluence Ratios and Substrate Temperatures

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概要

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• Near-infrared photoluminescent dynamics of thermally annealed Si-rich SiOx films grown by plasma enhanced chemical vapor deposition at different substrate temperatures and N2O/SiH4 fluence ratios are studied. The size of nanocrystallite Si (nc-Si) critically depends on the density of oxygen atoms in a Si-rich layer when the N2O/SiH4 ratio is smaller than 4; that is, it significantly increases at low N2O/SiH4 ratios. Deposition at a high N2O/SiH4 ratio strongly reduces the density of nc-Si and degrades the luminescence at 700–800 nm since the density of oxygen atoms is sufficient in the reaction of nc-Si with silicon atoms and formation of a stoichiometric SiO2 matrix. Under a high RF power condition, the increasing substrate temperature usually inhibits the precipitation of nc-Si since high-temperature growth facilitates stochiometric SiO2 deposition. The disappearance of visible PL reveals the complete regrowth of a stoichiometric SiO2 matrix around a nanocrystallite Si cluster after annealing. The results of the transient luminescent analysis of Si-rich SiOx samples corroborate well with the observed values and reveal a lifetime of 43 μs under an optimized nc-Si precipitation condition of 1100°C annealing for 3 h.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2006-02-15

著者

• Chang Chih-wei

  Department Of Neurosurgery Fujigaoka Hospital Showa University

• Kuo Hao-chung

  Department Of Photonic And Institute Of Electro-optical Engineering National Chiao Tung University

• Kuo Hao-Chung

  Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001, Ta Hsueh Rd., Hsinchu, Taiwan 300, R.O.C.

• Lin Chun-Jung

  Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001, Ta Hsueh Rd., Hsinchu, Taiwan 300, R.O.C.

• Lin Chi-Kuan

  Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001, Ta Hsueh Rd., Hsinchu, Taiwan 300, R.O.C.

• Chueh Yu-Lun

  Department of Materials Science and Engineering, National Tsing Hua University, 101, Section 2, Kuang Fu Rd., Hsinchu, Taiwan 300, R.O.C.

• Diau Eric

  Department of Applied Chemistry, National Chiao Tung University, 1001, Ta Hsueh Rd., Hsinchu, Taiwan 300, R.O.C.

• Chou Li-Jen

  Department of Materials Science and Engineering, National Tsing Hua University, 101, Section 2, Kuang Fu Rd., Hsinchu, Taiwan 300, R.O.C.

• Lin Gong-Ru

  Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001, Ta Hsueh Rd., Hsinchu, Taiwan 300, R.O.C.

• Lin Gong-Ru

  Department of Electrical Engineering, Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan

• Chang Chih-Wei

  Department of Applied Chemistry, National Chiao Tung University, 1001, Ta Hsueh Rd., Hsinchu, Taiwan 300, R.O.C.

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