Investigation of Hot-Carrier Stress Effect on High-Frequency Performance of Laterally Diffused Metal-Oxide-Semiconductor Transistors (Special Issue : Solid State Devices and Materials (1))

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概要

• 論文の詳細を見る

著者

• Kuo Hao-chung

  Department Of Photonic And Institute Of Electro-optical Engineering National Chiao Tung University

• Huang Guo-wei

  National Nano Device Laboratories

• Yang Yu-chi

  United Microelectronics Corporation

• CHEN Kun-Ming

  National Nano Device Laboratories

• Chen Bo-Yuan

  National Museum of Marine Biology & Aquarium (NMMBA)

• CHIU Chia-Sung

  National Nano Device Laboratories

• Mou Zong-Wen

  Department of Photonics, National Chiao Tung University, Hsinchu 300, Taiwan

• Liu Wen-De

  National Nano Device Laboratories, Hsinchu 300, Taiwan

• Chen Ming-Yi

  United Microelectronics Corporation, Hsinchiu 300, Taiwan

• Wang Kai-Li

  United Microelectronics Corporation, Hsinchiu 300, Taiwan

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