Effect of Mixed-Mode Electrical Stress on High-Frequency and RF Power Characteristics of SiGe Hetero-Junction Bipolar Transistors

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概要

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• In this study, we investigate the hot-carrier stress effects on the high-frequency and RF power characteristics of Si/SiGe hetero-junction bipolar transistors (HBTs). By simultaneously applying a high collector current density and a high collector–base voltage on Si/SiGe HBTs, because hot carriers will be induced; they will then degrade device performance. This is interesting because this stress condition is similar to the DC bias condition of a current source RF power amplifier, termed as the "mixed-mode" stress. We find that not only the high-frequency characteristic is adversely affected by but also the output power performance of Si/SiGe HBTs suffers from this electrical stress. In addition, we found that the degradations of the high-frequency and power characteristics of such HBTs are worse in constant-base-current measurement than in constant-collector-current measurement. We finally examined the degradations in terms of parasitic resistance and the ideality factors of base and collector currents using a large-signal model.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2008-04-25

著者

• Huang Guo-wei

  National Nano Device Laboratories

• CHEN Kun-Ming

  National Nano Device Laboratories

• HUNG Cheng-Chou

  United Microelectronics Corporation (UMC)

• Huang Sheng-yi

  United Microelectronic Corporation (umc)

• Liao Wen-shiang

  United Microelectronic Corporation (umc)

• Lien Chen-Hsin

  Department of Electrical Engineering, National Tsing Hua University, Hsinchu 300, Taiwan

• Liao Wen-Shiang

  United Microelectronics Corporation (UMC), No. 3, Li-Hsin Rd. II, Hsinchu 300, Taiwan

• Hung Cheng-Chou

  United Microelectronics Corporation (UMC), No. 3, Li-Hsin Rd. II, Hsinchu 300, Taiwan

• Huang Sheng-Yi

  United Microelectronics Corporation (UMC), No. 3, Li-Hsin Rd. II, Hsinchu 300, Taiwan

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