Degradation of Low-Frequency Noise in Partially Depleted Silicon-on-Insulator Metal Oxide Semiconductor Field-Effect Transistors by Hot-Carrier Stress
スポンサーリンク
概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-06-15
著者
-
Chang C‐y
Department Of Electronics Engineering National Chiao Tung University
-
Huang Guo-wei
National Nano Device Laboratories
-
CHANG Chun-Yen
Department of Electronics Engineering, National Chiao Tung University
-
Chien C‐h
Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University
-
HU Hsin-Hui
Department of Electronics Engineering, National Chiao Tung University
-
CHEN Kun-Ming
National Nano Device Laboratories
関連論文
- A New Method to Extract MOSFET Threshold Voltage, Effective Channel Length, and Channel Mobility Using S-parameter Measurement(Active Devices and Circuits)(Advances in Characterization and Measurement Technologies for Microwave and Millim
- Investigation of the Indium Atom Interdiffusion on the Growth of GaN/InGaN Heterostructures
- Analysis of Temperature Effects on the High-Frequency Characteristics of RF LDMOS Transistors
- Characterization of RF LDMOS Transistors with Different Layout Structures
- Degradation of Low-Frequency Noise in Partially Depleted Silicon-on-Insulator Metal Oxide Semiconductor Field-Effect Transistors by Hot-Carrier Stress
- Degradation of Low-Frequency Noise in PD SOI MOSFETs after Hot-Carrier Stress
- Low-Frequency Noise in Partially Depleted SOI MOSFETs Operating from Linear Region to Saturation Region at Various Temperatures
- High-Power-Density and High-Efficiency Atomic-Planar-Doped AlGaAs/InGaAs Quantum-Well Power High-Electron-Mobility Transistors for 2.4 V Medium-Power Wireless Communication Applications
- A Simple Fabrication Process of T-Shaped Gates Using a Deep-UV/Electron-Beam/Deep-UV : Tri-Layer Resist System and Electron-Beam Lithography
- A High-Power-Density and High-Efficiency Atomic-Planar-Doped AlGaAs/InGaAs Quantum-Well HEMT for 2.4V Medium-Power Wireless Communication Applications
- TiWN Schottky Contacts to n-Ga_In_P
- The Impact of Mixed-mode Electrical Stress on High-Frequency and RF Power Characteristics of SiGe HBTs
- Impact of Thermal Stability on the Characteristics of Complementary Metal Oxide Semiconductor Transistors with TiN Metal Gate
- Plasma-Process-Induced Damage in Sputtered TiN Metal-Gate Capacitors with Ultrathin Nitrided Oxides
- The Combined Effects of Nitrogen Implantation at S/D Extension and N_2O Oxide on 0.18μm N- and P-Metal Oxide Field Effect Transistors (MOSEETs)
- The Effects of Shallow Germanium Halo Doping on N-Channel Metal Oxide Semiconductor Field Effect Transistors
- The Role of a Resist During O_2 Plasma Ashing and Its Impact on the Reliability Evaluation of Ultrathin Gate Oxides
- Characterization of Antenna Effect by Nondestructive Gate Current Measurement
- Temperature Influence on the Generalized Einstein Relation for Degenerate Semiconductors with Arbitrary Band Structures
- Effect of Interfacial Oxide on Static and High-Frequency Performance in Poly-Emitter Bipolar Transistors Under High-Level Injection
- Effect of Ge Concentration on Static and Microwave Performances in Ge_xSi_ Heterojunction Bipolar Transistors under High-Level Injection
- Effects of Rapid Thermal Annealing on Si Delta-Doped GaInP Grown by Low Pressure Metalorganic Chemical Vapor Deposition
- Silicon Delta Doping of GaInP Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
- A 5.2GHz 47dB Image Rejection Double Quadrature Gilbert Downconverter Using 0.35μm SiGe HBT Technology(Analog Circuit Techniques and Related Topics)
- A 5.7 GHz Gilbert Upconversion Mixer with an LC Current Combiner Output Using 0.35μm SiGe HBT Technology(RF, Analog Circuit and Device Technologies)
- Noise Parameters Computation of Microwave Devices Using Genetic Algorithms(Active Circuits & Antenna, Recent Technologies of Microwave and Millimeter-Wave Devices Focusing on Miniaturization and Advancement in Performance with Their Appli
- A Novel Approach for Parameter Determination of HBT Small-Signal Equivalent Circuit(Model, Analog Circuit and Device Technologies)
- CMOS RFIC : Application to Wireless Transceiver Design (Special Issue on Low-Power High-Speed CMOS LSI Technologies)
- P-Channel Metal Oxide Semiconductor Field Effect Transistors with Polycrystalline-Si_Ge_x Gate Grown by Ultra-High Vacuum Chemical Vapor Deposition System
- Direct Oxidation of Si_Ge_x Layers Using Vacuum-Ultra-Violet Light Radiation in Oxygen
- Very High Hole Mobility in P-Type Si/SiGe Modulation-Doped Heterostructures
- Epitaxy of Si_Ge_x by Ultrahigh-Vacuum Chemical Vapor Deposition Using Si_2H_6 and GeH_4
- Characterization of Si/SiGe Strained-Layer Superlattices Grown by an Ultrahigh Vacuum/Chemical Vapor Deposition Technique
- Characterization of Polycrystalline Silicon Thin Film Transistors Fabricated by Ultrahigh-Vacuum Chemical Vapor Deposition and Chemical Mechanical Polishing
- Combination of Chemical Mechanical Polishing and Ultrahigh Vacuum Chemical Vapor Deposition Techniques to Fabricate Polycrystalline Thin Film Transistors
- Low-Temperature Epitaxial Growth of Silicon and Silicon-Germanium Alloy by Ultrahigh-Vacuum Chemical Vapor Deposition
- Dual-Band Mixer Design(RF, Analog Circuit and Device Technologies)
- Characterization of Improved AlGaAs/GaAs Resonant Tunneling Heterostructure Bipolar Transistors
- A CMOS Low-Noise Amplifier for Ultra Wideband Wireless Applications(Wide Band Systems)
- Interfacial Abruptness in Si/SiGe Heteroepitaxy Grown by Ultrahigh Vacuum Chemical Vapor Deposition
- Electrical Properties of Multiple High-Dose Si Implantation in p-GaN
- Epitaxial Growth of the GaN Film by Remote-Plasma Metalorganic Chemical Vapor Deposition
- Back-Gating Effects on the Ga_In_P/InP/InGaAs High-Electron-Mobility Transistor
- Influence of Metalorganic Sources on the Composition Uniformity of Selectively Grown Ga_XIn_P
- Cation Source Dependence of Ga_In_P Growth Rate by Low-Pressure Metalorganic Chemical Vapor Deposition
- Low-Voltage-Operation High-Power-Density AlGaAs/InGaAs Enhancement-Mode Pseudomorphic High-Electron-Mobility Transistor for Personal Handy-Phone Handset Application : Semiconductors
- Characterization and Reliability of Lightly-Doped-Drain Polysilicon Thin-Film Transistors with Oxide Sidewall Spacer Formed by One-Step Selective Liquid Phase Deposition
- Dimensional Effects on the Drain Current of N-and P-Channel Polycrystalline Silicon Thin Film Transistors
- Excellent Au/Ge/Pd Ohmic Contacts to n-type GaAs Using Mo/Ti as the Diffusion Barrier
- High-Performance Au/Ti/Ge/Pd Ohmic Contacts on n-Type In_Ga_P
- New Polysilicon-Oxide-Nitride-Oxide-Silicon Electrically Erasable Programmable Read-only Memory Device Approach for Eliminating Off-Cell Leakage Current
- Growth of ZnSe Epilayer on Si Using Ge/Ge_xSi_ Buffer Structure
- Effects of O_2- and N_2O-Plasma Treatments on Properties of Plasma-Enhanced-Chemical-Vapor-Deposition Tetraethylorthosilicate Oxide
- Comparison of N_2 and NH_3 Plasma Passivation Effects on Polycrystalline Silicon Thin-Film Transistors
- Optimization of Short Channel Effect With Arsenic Halo Implant through Polysilicon Gate : Semiconductors
- Shallow-Trench Isolation With Raised-Field-Oxide Structure
- The Elimination of Inversion Domains in MBE-GaN Grown Using Low Temperature Nitridation
- Growth of GaN on Si (111) using simultaneous AlN/α-Si_3N_4 buffer structure
- A Study on Bilateral Latch-Up Self-Triggering in Complementary Metal-Oxide-Semiconductor Protection Circuits
- The Behavior of Bilateral Latch-Up Triggering in VLSI Electro Static Discharge Damage Protection Circuits
- Charge Loss Due to AC Program Disturbance Stresses in EPROMs
- Trarnsient and Steady State Carrier Transport under High Field Stressesin SONOS EEPROM Device
- Systematical Study of Reliability Issues in Plasma-Nitrided and Thermally Nitrided Oxides for Advanced Dual-Gate Oxide p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors
- A method for suppressing deep-level emission in ZnSe/Ge/Ge_xSi_/Si structure
- Composite-Channel Metamorphic High Electron Mobility Transistor for Low-Noise and High-Linearity Applications
- New Nanometer T-Gate Fabricated by Thermally Reflowed Resist Technique : Instrumentation, Measurement, and Fabrication Technology
- Pulsed Characteristics of Microwave SiGe Heterojunction Bipolar Transistors Operated at High Collector Voltages
- High-Frequency Characteristics of SiGe Heterojunction Bipolar Transistors under Pulsed-Mode Operation(Active Devices and Circuits)(Advances in Characterization and Measurement Technologies for Microwave and Millimeter-Wave Materials, Devi
- 3D Multi-gate NMOS Mobility Enhancement with High-tensile ILD-SiN_x Stressor
- The Port-to-Port Isolation the Downconversion P-Type Micromixer Using Different N-Well Topologies(Advanced RF Technologies for Compact Wireless Equipment and Mobile Phones)
- The Effect of Selectively and Fully Ion-Implanted Collector on RF Characteristics of BJT Devices(Advanced RF Technologies for Compact Wireless Equipment and Mobile Phones)
- Design and Analysis of On-Chip Tapered Transformers for Silicon RFICs
- Investigation of Hot-Carrier Stress Effect on High-Frequency Performance of Laterally Diffused Metal-Oxide-Semiconductor Transistors (Special Issue : Solid State Devices and Materials (1))
- Radio-Frequency Small-Signal and Noise Modeling for Silicon-on-Insulator Dynamic Threshold Voltage Metal–Oxide–Semiconductor Field-Effect Transistors
- Logic 90 nm n-Channel Field Effect Transistor Current and Speed Enhancements Through External Mechanical Package Straining
- Analysis of Temperature Effects on High-Frequency Characteristics of RF Lateral-Diffused Metal–Oxide–Semiconductor Transistors
- Radio-Frequency Silicon-on-Insulator Modeling Considering the Neutral-Body Effect
- Composite-Channel Metamorphic High Electron Mobility Transistor for Low-Noise and High-Linearity Applications
- Characterization of RF Lateral-Diffused Metal–Oxide–Semiconductor Field-Effect Transistors with Different Layout Structures
- Low-Frequency Noise in Partially Depleted SOI MOSFETs Operating from Linear Region to Saturation Region at Various Temperatures
- Effect of Mixed-Mode Electrical Stress on High-Frequency and RF Power Characteristics of SiGe Hetero-Junction Bipolar Transistors
- Low-Frequency Noise Characteristics of SiGe p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-Compressive Interlayer-Dielectric-SiNx Stressing Layer
- Degradation of Low-Frequency Noise in Partially Depleted Silicon-on-Insulator Metal Oxide Semiconductor Field-Effect Transistors by Hot-Carrier Stress
- Implementation of Surface Acoustic Wave Vapor Sensor Using Complementary Metal–Oxide–Semiconductor Amplifiers
- Design and Analysis of On-Chip Tapered Transformers for Silicon Radio-Frequency Integrated Circuits
- A Monolithic SiGe Heterojunction Bipolar Transistor Gilbert Upconverter with Inductor–Capacitor Current Mirror Load and Lumped-Element Rat-Race Balun