Influence of Metalorganic Sources on the Composition Uniformity of Selectively Grown Ga_XIn_<1-X>P

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1994-09-15

著者

• CHANG Chun-Yen

  Department of Electronics Engineering, National Chiao Tung University

• Chan S‐h

  Advanced Epitaxy Technol. Inc. Hsinchu Twn

• Chan Shih-hsiung

  Department Of Electrical Engineering National Cheng Kung University

• Sze Simon

  Department Of Electronics Engineering And Institute Of Electronics National Chiao-tung University:na

• Chang Chun-yen

  Department Of Electronics Engineering & Institute Of Electronics National Chiao Tung Uiversity

• Sze Simon

  Department Of Electronics Engineering National Chiao-tung Universiry

• Chang Chun-yen

  Department Of Electronics Engineering National Chiao-tung Universiry

関連論文

• A New Method to Extract MOSFET Threshold Voltage, Effective Channel Length, and Channel Mobility Using S-parameter Measurement(Active Devices and Circuits)(Advances in Characterization and Measurement Technologies for Microwave and Millim
• Investigation of the Indium Atom Interdiffusion on the Growth of GaN/InGaN Heterostructures
• Analysis of Temperature Effects on the High-Frequency Characteristics of RF LDMOS Transistors
• Characterization of RF LDMOS Transistors with Different Layout Structures
• Ion-Implantation Treatment(Ba, Sr)TiO_3 Thin Films
• Thermal Stability of Co-Sputtered Ru-Ti Alloy Electrodes for Dynamic Random Access Memory Applications
• Rapid-Thermal-Processed BaTiO_3 Thin Films Deposited by Liquid-Source Misted Chemical Deposition
• Degradation of Low-Frequency Noise in Partially Depleted Silicon-on-Insulator Metal Oxide Semiconductor Field-Effect Transistors by Hot-Carrier Stress
• Degradation of Low-Frequency Noise in PD SOI MOSFETs after Hot-Carrier Stress
• Low-Frequency Noise in Partially Depleted SOI MOSFETs Operating from Linear Region to Saturation Region at Various Temperatures
• A High-Power-Density and High-Efficiency Atomic-Planar-Doped AlGaAs/InGaAs Quantum-Well HEMT for 2.4V Medium-Power Wireless Communication Applications
• The Impact of Mixed-mode Electrical Stress on High-Frequency and RF Power Characteristics of SiGe HBTs
• The Effects of Shallow Germanium Halo Doping on N-Channel Metal Oxide Semiconductor Field Effect Transistors
• Temperature Influence on the Generalized Einstein Relation for Degenerate Semiconductors with Arbitrary Band Structures
• Effect of Interfacial Oxide on Static and High-Frequency Performance in Poly-Emitter Bipolar Transistors Under High-Level Injection
• Effect of Ge Concentration on Static and Microwave Performances in Ge_xSi_ Heterojunction Bipolar Transistors under High-Level Injection
• Effects of Rapid Thermal Annealing on Si Delta-Doped GaInP Grown by Low Pressure Metalorganic Chemical Vapor Deposition
• Silicon Delta Doping of GaInP Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
• Noise Parameters Computation of Microwave Devices Using Genetic Algorithms(Active Circuits & Antenna, Recent Technologies of Microwave and Millimeter-Wave Devices Focusing on Miniaturization and Advancement in Performance with Their Appli
• A Novel Approach for Parameter Determination of HBT Small-Signal Equivalent Circuit(Model, Analog Circuit and Device Technologies)
• CMOS RFIC : Application to Wireless Transceiver Design (Special Issue on Low-Power High-Speed CMOS LSI Technologies)
• P-Channel Metal Oxide Semiconductor Field Effect Transistors with Polycrystalline-Si_Ge_x Gate Grown by Ultra-High Vacuum Chemical Vapor Deposition System
• Very High Hole Mobility in P-Type Si/SiGe Modulation-Doped Heterostructures
• Characterization of Polycrystalline Silicon Thin Film Transistors Fabricated by Ultrahigh-Vacuum Chemical Vapor Deposition and Chemical Mechanical Polishing
• Combination of Chemical Mechanical Polishing and Ultrahigh Vacuum Chemical Vapor Deposition Techniques to Fabricate Polycrystalline Thin Film Transistors
• Dual-Band Mixer Design(RF, Analog Circuit and Device Technologies)
• Characterization of Improved AlGaAs/GaAs Resonant Tunneling Heterostructure Bipolar Transistors
• A CMOS Low-Noise Amplifier for Ultra Wideband Wireless Applications(Wide Band Systems)
• Interfacial Abruptness in Si/SiGe Heteroepitaxy Grown by Ultrahigh Vacuum Chemical Vapor Deposition
• Effectiveness of NH_3 Plasma Treatment in Preventing Wet Stripper Damage to Low-K Hydrogen Silsesquioxane (HSQ) : Semiconductors
• Elimination of Dielectric Degradation for Chemical-Mechanical Planarization of LOW-k Hydrogen Silisesquioxane
• Enhancement of Barrier Properties in Chemical Vapor Deposited TiN Employing Multi-Stacked Ti/TiN Structure
• Effectively Blocking Copper Diffusion at Low-k Hydrogen Silsesquioxane/Copper Interface
• Enhancing the Oxygen Plasma Resistance of Low-k Methylsilsesquioxane by H_2 Plasma Treatment
• Optical and Electrical Characteristics of CO_2-Laser-Treated Mg-Doped GaN Film
• Electrical Properties of Multiple High-Dose Si Implantation in p-GaN
• Epitaxial Growth of the GaN Film by Remote-Plasma Metalorganic Chemical Vapor Deposition
• Back-Gating Effects on the Ga_In_P/InP/InGaAs High-Electron-Mobility Transistor
• Influence of Metalorganic Sources on the Composition Uniformity of Selectively Grown Ga_XIn_P
• Cation Source Dependence of Ga_In_P Growth Rate by Low-Pressure Metalorganic Chemical Vapor Deposition
• Low-Voltage-Operation High-Power-Density AlGaAs/InGaAs Enhancement-Mode Pseudomorphic High-Electron-Mobility Transistor for Personal Handy-Phone Handset Application : Semiconductors
• Characterization and Reliability of Lightly-Doped-Drain Polysilicon Thin-Film Transistors with Oxide Sidewall Spacer Formed by One-Step Selective Liquid Phase Deposition
• Dimensional Effects on the Drain Current of N-and P-Channel Polycrystalline Silicon Thin Film Transistors
• Excellent Au/Ge/Pd Ohmic Contacts to n-type GaAs Using Mo/Ti as the Diffusion Barrier
• High-Performance Au/Ti/Ge/Pd Ohmic Contacts on n-Type In_Ga_P
• Growth of ZnSe Epilayer on Si Using Ge/Ge_xSi_ Buffer Structure
• Effects of O_2- and N_2O-Plasma Treatments on Properties of Plasma-Enhanced-Chemical-Vapor-Deposition Tetraethylorthosilicate Oxide
• Comparison of N_2 and NH_3 Plasma Passivation Effects on Polycrystalline Silicon Thin-Film Transistors
• Optimization of Short Channel Effect With Arsenic Halo Implant through Polysilicon Gate : Semiconductors
• Shallow-Trench Isolation With Raised-Field-Oxide Structure
• The Elimination of Inversion Domains in MBE-GaN Grown Using Low Temperature Nitridation
• Growth of GaN on Si (111) using simultaneous AlN/α-Si_3N_4 buffer structure
• Systematical Study of Reliability Issues in Plasma-Nitrided and Thermally Nitrided Oxides for Advanced Dual-Gate Oxide p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors
• A method for suppressing deep-level emission in ZnSe/Ge/Ge_xSi_/Si structure
• Composite-Channel Metamorphic High Electron Mobility Transistor for Low-Noise and High-Linearity Applications
• New Nanometer T-Gate Fabricated by Thermally Reflowed Resist Technique : Instrumentation, Measurement, and Fabrication Technology
• A Novel Cost Effective Double Reduced Surface Field Laterally Diffused Metal Oxide Semiconductor Design for Improving Off-State Breakdown Voltage
• Large Area of Ultraviolet GaN-Based Photonic Quasicrystal Laser
• Light Output Enhancement of GaN-Based Light-Emitting Diodes by Optimizing SiO2 Nanorod-Array Depth Patterned Sapphire Substrate
• Analysis of Temperature Effects on High-Frequency Characteristics of RF Lateral-Diffused Metal–Oxide–Semiconductor Transistors
• Double $\delta$-Doped Enhancement-Mode InGaP/AlGaAs/InGaAs Pseudomorphic High Electron Mobility Transistor for Linearity Application
• Composite-Channel Metamorphic High Electron Mobility Transistor for Low-Noise and High-Linearity Applications
• Performance Enhancement by Local Strain in $\langle 110\rangle$ Channel n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors on (111) Substrate
• Characterization of RF Lateral-Diffused Metal–Oxide–Semiconductor Field-Effect Transistors with Different Layout Structures
• Low-Frequency Noise in Partially Depleted SOI MOSFETs Operating from Linear Region to Saturation Region at Various Temperatures
• Growth of High-Quality Ge Epitaxial Layers on Si (100)
• Degradation of Low-Frequency Noise in Partially Depleted Silicon-on-Insulator Metal Oxide Semiconductor Field-Effect Transistors by Hot-Carrier Stress
• Systematical Study of Reliability Issues in Plasma-Nitrided and Thermally Nitrided Oxides for Advanced Dual-Gate Oxide p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors
• Characterization of Polycrystalline Silicon Thin Film Transistors Fabricated by Ultrahigh-Vacuum Chemical Vapor Deposition and Chemical Mechanical Polishing
• Cost-Effective and Self-Textured Gallium-Doped Zinc Oxide Front Contacts for Hydrogenated Amorphous Silicon Thin-Film Solar Cells

もっと見る 閉じる

スポンサーリンク