Growth of GaN on Si (111) using simultaneous AlN/α-Si_3N_4 buffer structure
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概要
- 論文の詳細を見る
- 2007-09-19
著者
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CHANG Chun-Yen
Department of Electronics Engineering, National Chiao Tung University
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Chang Chun-yen
Department Of Electronics Engineering Nation Chiao Tung University
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Chang Chun-yen
Department Of Electronics Engineering & Institute Of Electronics National Chiao Tung Uiversity
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Chen Yi-cheng
Department Of Electronics Engineering Nation Chiao Tung University
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Chang C‐y
Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University
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Shen Shih-guo
Department Of Electronics Engineering Nation Chiao Tung University
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CHANG Jet-Chung
Department of Electronics Engineering, Nation Chiao Tung University
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YANG Tsung
Department of Electronics Engineering, Nation Chiao Tung University
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KU Jui
Department of Electrophysics, Nation Chiao Tung University
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Ku Jui-tai
Department Of Electrophysics Nation Chiao Tung University
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Yang Tsung-hsi
Department Of Electronics Engineering Nation Chiao Tung University
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Chang Jet-chung
Department Of Electronics Engineering Nation Chiao Tung University
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Yang Tsung
Department Of Electronics Engineering Nation Chiao Tung University
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Ku Jui
Department Of Electrophysics Nation Chiao Tung University
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