Epitaxial Overgrowth of Gallium Nitride Nano-Rods on Silicon (111) Substrates by RF-Plasma-Assisted Molecular Beam Epitaxy

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概要

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• Strain-free gallium nitride (GaN) overgrowth on GaN nano-rods is realized by RF-plasma assisted molecular beam epitaxy (RF-MBE) on silicon (Si) substrate. The strain-free condition was identified by the strong free A exciton (FXA) photoluminescence (PL) peak at 3.478 eV and the E2 high phonon Raman shift of 567 cm-1. It is clearly demonstrated that the critical diameter of GaN nano-rods is around 80 nm for the overgrowth of strain-free GaN. The blue-shift of PL peak energy and phonon Raman energy with decreasing the diameter of nano-rod result from the strain relaxation of overgrowth GaN.

• 2010-04-25

著者

• Ku Jui-tai

  Department Of Electrophysics Nation Chiao Tung University

• Yang Tsung-hsi

  Department Of Electronics Engineering Nation Chiao Tung University

• Yuen-Yee Wong

  Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, Taiwan 30010, R.O.C.

• Chiang-Yao Chen

  Ulvac Taiwan Inc., Hsinchu, Taiwan 30078, R.O.C.

• Jet-Rung Chang

  Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan 30010, R.O.C.

• Chang Jet-Rung

  Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan 30010, R.O.C.

• Wu-Ching Chou

  Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan 30010, R.O.C.

• Chun-Yen Chang

  Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan 30010, R.O.C.

• Jui-Tai Ku

  Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan 30010, R.O.C.

• Tsung-Hsi Yang

  Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan 30010, R.O.C.

関連論文

• Growth of ZnSe Epilayer on Si Using Ge/Ge_xSi_ Buffer Structure
• The Elimination of Inversion Domains in MBE-GaN Grown Using Low Temperature Nitridation
• Growth of GaN on Si (111) using simultaneous AlN/α-Si_3N_4 buffer structure
• A method for suppressing deep-level emission in ZnSe/Ge/Ge_xSi_/Si structure
• Controlled Placement of Self-Organized Ge Dots on Patterned Si(001) Surfaces
• Flower-Like Distribued Self-Oranized Ge Dots on Patterned Si (001) Substrates
• Epitaxial Overgrowth of Gallium Nitride Nano-Rods on Silicon (111) Substrates by RF-Plasma-Assisted Molecular Beam Epitaxy
• Growth of High-Quality Ge Epitaxial Layers on Si (100)

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