Radio-Frequency Silicon-on-Insulator Modeling Considering the Neutral-Body Effect

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概要

• 論文の詳細を見る

• This paper presents small-signal modeling for state-of-the-art radio-frequency (RF) silicon-on-insulator (SOI) metal–oxide–semiconductor field effect transistors (MOSFETs). Especially, we have incorporated the neutral-body effect in our RF SOI model. This effect is significant in both RF extrinsic and intrinsic modeling stages. In addition, we have developed a physically-accurate parameter extraction method based on our analytical expressions. Our modeling results agree well with the measured data and can capture the frequency dependences of both output conductance and capacitance in the GHz frequency region. The anomalous $S_{22}$ and $S_{21}$ behaviors as well as the output conductance rising effect observed in our measurements can be predicted and described using the proposed model.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2008-04-25

著者

• Huang Guo-wei

  National Nano Device Laboratories

• Su Pin

  Department Of Electronics Engineering National Chiao Tung University

• CHEN Kun-Ming

  National Nano Device Laboratories

• Liang Victor

  United Microelectronics Corporation

• Lin Chien-Ting

  United Microelectronics Corporation, Hsinchu 300, Taiwan

• Wang Sheng-Chun

  Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan

• Chen Kun-Ming

  National Nano Device Laboratories, Hsinchu 300, Taiwan

• Su Pin

  Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan

• Liang Victor

  United Microelectronics Corporation, Hsinchu 300, Taiwan

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