Investigation of Inversion Capacitance–Voltage Reconstruction for Metal Oxide Semiconductor Field Effect Transistors with Leaky Dielectrics using BSIM4/SPICE and Intrinsic Input Resistance Model
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概要
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This paper presents an inversion capacitance–voltage ($C$–$V$) reconstruction method for long-channel metal oxide semiconductor field effect transistors (MOSFETs) using the BSIM4/SPICE and the intrinsic input resistance ($R_{\text{ii}}$) model. The concept of $R_{\text{ii}}$ has been validated by segmented BSIM4/SPICE simulation. Since the $R_{\text{ii}}$ model is scalable with $V_{\text{GS}}$ and $L$, our $R_{\text{ii}}$ approach is physically accurate. Due to its simplicity, this method may provide an option for regular process monitoring purposes.
- 2007-04-30
著者
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Su Pin
Department Of Electronics Engineering National Chiao Tung University
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Su Ke-wei
Taiwan Semiconductor Manufacturing Company
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CHIANG Chung-Shi
Taiwan Semiconductor Manufacturing Company
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LIU Sally
Taiwan Semiconductor Manufacturing Company
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Lee Wei
Department Of Electrical Engineering Tamkang University
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Su Ke-Wei
Taiwan Semiconductor Manufacturing Company, 9, Creation Rd. 1, Science-Based Industrial Park, Hsinchu, Taiwan 300, R.O.C.
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Su Pin
Department of Electronics Engineering, National Chiao Tung University, 1001 Ta-Hsueh Road, Hsinchu, Taiwan 300, R.O.C.
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Lee Wei
Department of Electronics Engineering, National Chiao Tung University, 1001 Ta-Hsueh Road, Hsinchu, Taiwan 300, R.O.C.
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Liu Sally
Taiwan Semiconductor Manufacturing Company, 9, Creation Rd. 1, Science-Based Industrial Park, Hsinchu, Taiwan 300, R.O.C.
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