Fully Analytical Modeling of Cu Interconnects Up to 110GHz
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概要
- 論文の詳細を見る
- 2007-09-19
著者
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LIU Sally
Taiwan Semiconductor Manufacturing Company
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Hsu Shawn
Dept. Of Electrical Engineering And Institute Of Electronics Engineering National Tsing Hua Universi
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Yeh Tzu-jin
Taiwan Semiconductor Manufacturing Company
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JIN Jun-De
Dept. of Electrical Engineering and Institute of Electronics Engineering, National Tsing Hua Univers
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YANG Ming-Ta
Taiwan Semiconductor Manufacturing Company
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Jin Jun-de
Dept. Of Electrical Engineering And Institute Of Electronics Engineering National Tsing Hua Universi
関連論文
- Investigation of Inversion C-V Reconstruction for Long-Channel MOSFETs with Leaky Dielectrics using Intrinsic Input Resistance Approach
- Fully Analytical Modeling of Cu Interconnects Up to 110GHz
- Wideband CMOS Transimpedance Amplifier Design Using Transformer-Peaking Technique
- Investigation of Inversion Capacitance–Voltage Reconstruction for Metal Oxide Semiconductor Field Effect Transistors with Leaky Dielectrics using BSIM4/SPICE and Intrinsic Input Resistance Model
- Fully Analytical Modeling of Cu Interconnects up to 110 GHz